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SST25WF020

更新时间： 2024-11-19 03:04:47
品牌 Logo 应用领域
SST 闪存
页数 文件大小 规格书
29页 826K
描述
512 Kbit / 1 Mbit / 2 Mbit 1.8V SPI Serial Flash

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SST25WF020 数据手册

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512 Kbit / 1 Mbit / 2 Mbit 1.8V SPI Serial Flash  
SST25WF512 / SST25WF010 / SST25WF020  
SST25VF016B16Mb Serial Peripheral Interface (SPI) flash memory  
Advance Information  
FEATURES:  
•
•
•
•
Single Voltage Read and Write Operations  
– 1.65-1.95V  
Serial Interface Architecture  
– SPI Compatible: Mode 0 and Mode 3  
High Speed Clock Frequency  
– 40MHz  
•
•
End-of-Write Detection  
– Software polling the BUSY bit in Status Register  
– Busy Status readout on SO pin  
Reset Pin (RST#) or Programmable Hold Pin  
(HOLD#) option  
– Hardware Reset pin as default  
– Hold pin option to suspend a serial sequence  
without deselecting the device  
Superior Reliability  
– Endurance: 100,000 Cycles  
– Greater than 100 years Data Retention  
•
•
Write Protection (WP#)  
– Enables/Disables the Lock-Down function of the  
status register  
Software Write Protection  
– Write protection through Block-Protection bits in  
status register  
•
•
Ultra-Low Power Consumption:  
– Active Read Current: 9 mA (typical @ 20MHz)  
– Standby Current: 2 µA (typical)  
Flexible Erase Capability  
– Uniform 4 KByte sectors  
– Uniform 32 KByte overlay blocks  
– Uniform 64 KByte overlay blocks (2 Mbit only)  
•
•
•
Temperature Range  
– Industrial: -40°C to +85°C  
Packages Available  
•
•
Fast Erase and Byte-Program:  
– 8-lead SOIC (150 mils)  
– Chip-Erase Time: 125 ms (typical)  
– Sector-/Block-Erase Time: 62ms (typical)  
– Byte-Program Time: 50 µS (typical)  
All non-Pb (lead-free) devices are RoHS compliant  
Auto Address Increment (AAI) Programming  
– Decrease total chip programming time over  
Byte-Program operations  
PRODUCT DESCRIPTION  
The SST25WF512/010/020 are members of the Serial  
Flash 25 Series family and features a four-wire, SPI-com-  
patible interface that allows for a low pin-count package  
which occupies less board space and ultimately lowers  
total system costs. SST25WF512/010/020 SPI serial flash  
memories are manufactured with SST proprietary, high-  
performance CMOS SuperFlash technology. The split-gate  
cell design and thick-oxide tunneling injector attain better  
reliability and manufacturability compared with alternate  
approaches.  
power supply of 1.65-1.95V for SST25WF512/010/020.  
The total energy consumed is a function of the applied volt-  
age, current, and time of application. Since for any given  
voltage range, the SuperFlash technology uses less cur-  
rent to program and has a shorter erase time, the total  
energy consumed during any Erase or Program operation  
is less than alternative flash memory technologies.  
The SST25WF512/010/020 devices are offered in an 8-  
lead, 150 mils SOIC package. See Figure 2 for the pin  
assignment.  
The SST25WF512/010/020 devices significantly improve  
performance and reliability, while lowering power consump-  
tion. The devices write (Program or Erase) with a single  
©2006 Silicon Storage Technology, Inc.  
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.  
These specifications are subject to change without notice.  
S71328-01-000  
1
02/07  
1234567...29

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