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SST25VF512A-33-4C-SAE PDF预览

SST25VF512A-33-4C-SAE

更新时间: 2024-11-19 20:27:07
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟PC光电二极管内存集成电路
页数 文件大小 规格书
28页 286K
描述
512K X 1 SPI BUS SERIAL EEPROM, PDSO8, 4.90 X 6 MM, ROHS COMPLIANT, MS-012AA, SOIC-8

SST25VF512A-33-4C-SAE 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:SOIC
包装说明:SOP, SOP8,.25针数:8
Reach Compliance Code:compliantECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51Factory Lead Time:15 weeks
风险等级:1.43Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:5081
Samacsys Pin Count:8Samacsys Part Category:Integrated Circuit
Samacsys Package Category:Small Outline PackagesSamacsys Footprint Name:SA (8-pin SOIC)
Samacsys Released Date:2015-04-16 09:48:08Is Samacsys:N
最大时钟频率 (fCLK):33 MHz耐久性:100000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
长度:4.9 mm内存密度:524288 bit
内存集成电路类型:FLASH内存宽度:1
湿度敏感等级:1功能数量:1
端子数量:8字数:524288 words
字数代码:512000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:512KX1封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL峰值回流温度(摄氏度):260
电源:3/3.3 V编程电压:2.7 V
认证状态:Not Qualified座面最大高度:1.75 mm
串行总线类型:SPI最大待机电流:0.000015 A
子类别:Flash Memories最大压摆率:0.03 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Matte Tin (Sn) - annealed端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40类型:NOR TYPE
宽度:3.9 mm写保护:HARDWARE/SOFTWARE
Base Number Matches:1

SST25VF512A-33-4C-SAE 数据手册

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512 Kbit SPI Serial Flash  
SST25VF512A  
A Microchip Technology Company  
Data Sheet  
SST’s serial flash family features a four-wire, SPI-compatible interface that allows  
for a low pin-count package occupying less board space and ultimately lowering  
total system costs. SST25VF512A SPI serial flash memory is manufactured with  
SST’s proprietary, high-performance CMOS SuperFlash technology. The split-  
gate cell design and thick-oxide tunneling injector attain better reliability and man-  
ufacturability compared with alternate approaches.  
Features  
• Single 2.7-3.6V Read and Write Operations  
• End-of-Write Detection  
– Software Status  
• Serial Interface Architecture  
• Hold Pin (HOLD#)  
– SPI Compatible: Mode 0 and Mode 3  
– Suspends a serial sequence to the memory  
• 33 MHz Max Clock Frequency  
• Superior Reliability  
without deselecting the device  
• Write Protection (WP#)  
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
– Enables/Disables the Lock-Down function of the status  
register  
• Low Power Consumption:  
• Software Write Protection  
– Active Read Current: 7 mA (typical)  
– Standby Current: 8 µA (typical)  
– Write protection through Block-Protection bits in status  
register  
• Flexible Erase Capability  
• Temperature Range  
– Uniform 4 KByte sectors  
– Uniform 32 KByte overlay blocks  
– Commercial: 0°C to +70°C  
– Industrial: -40°C to +85°C  
– Extended: -20°C to +85°C  
• Fast Erase and Byte-Program:  
• Packages Available  
– Chip-Erase Time: 70 ms (typical)  
– Sector- or Block-Erase Time: 18 ms (typical)  
– Byte-Program Time: 14 µs (typical)  
– 8-lead SOIC 150 mil body width  
– 8-contact WSON (5mm x 6mm)  
• Auto Address Increment (AAI) Programming  
• All non-Pb (lead-free) devices are RoHS compliant  
– Decrease total chip programming time over Byte-Pro-  
gram operations  
www.microchip.com  
©2011 Silicon Storage Technology, Inc.  
DS25090A  
10/11  

SST25VF512A-33-4C-SAE 替代型号

型号 品牌 替代类型 描述 数据表
25A512-I/SN MICROCHIP

类似代替

64K X 8 SPI BUS SERIAL EEPROM, PDSO8, 3.90 MM, ROHS COMPLIANT, PLASTIC, SOIC-8
25AA512-I/SN MICROCHIP

类似代替

512 Kbit SPI Bus Serial EEPROM

与SST25VF512A-33-4C-SAE相关器件

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SST25VF512A-33-4E-QAE SST

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SST25VF512A-33-4E-QAE SILICON

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SST25VF512A-33-4E-SAE SST

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SST25VF512A-33-4I-QA SILICON

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SST25VF512A-33-4I-QAE MICROCHIP

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512 Kbit SPI Serial Flash
SST25VF512A-33-4I-QAE-T MICROCHIP

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SST25VF512A-33-4I-QAE-T
SST25VF512A-33-4I-SA SILICON

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EEPROM, 512KX1, Serial, CMOS, PDSO8, 0.150 INCH, MS-012AA, SOIC-8