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SST25VF512A PDF预览

SST25VF512A

更新时间: 2024-09-20 14:54:47
品牌 Logo 应用领域
美国微芯 - MICROCHIP /
页数 文件大小 规格书
28页 270K
描述
SST's serial flash family features a four-wire, SPI-compatible interface that allows for a low pin

SST25VF512A 数据手册

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512 Kbit SPI Serial Flash  
SST25VF512A  
A Microchip Technology Company  
Data Sheet  
SST’s serial flash family features a four-wire, SPI-compatible interface that allows  
for a low pin-count package occupying less board space and ultimately lowering  
total system costs. SST25VF512A SPI serial flash memory is manufactured with  
SST’s proprietary, high-performance CMOS SuperFlash technology. The split-  
gate cell design and thick-oxide tunneling injector attain better reliability and man-  
ufacturability compared with alternate approaches.  
Features  
• Single 2.7-3.6V Read and Write Operations  
• End-of-Write Detection  
– Software Status  
• Serial Interface Architecture  
• Hold Pin (HOLD#)  
– SPI Compatible: Mode 0 and Mode 3  
– Suspends a serial sequence to the memory  
• 33 MHz Max Clock Frequency  
• Superior Reliability  
without deselecting the device  
• Write Protection (WP#)  
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
– Enables/Disables the Lock-Down function of the status  
register  
• Low Power Consumption:  
• Software Write Protection  
– Active Read Current: 7 mA (typical)  
– Standby Current: 8 µA (typical)  
– Write protection through Block-Protection bits in status  
register  
• Flexible Erase Capability  
• Temperature Range  
– Uniform 4 KByte sectors  
– Uniform 32 KByte overlay blocks  
– Commercial: 0°C to +70°C  
– Industrial: -40°C to +85°C  
– Extended: -20°C to +85°C  
• Fast Erase and Byte-Program:  
• Packages Available  
– Chip-Erase Time: 70 ms (typical)  
– Sector- or Block-Erase Time: 18 ms (typical)  
– Byte-Program Time: 14 µs (typical)  
– 8-lead SOIC 150 mil body width  
– 8-contact WSON (5mm x 6mm)  
• Auto Address Increment (AAI) Programming  
• All non-Pb (lead-free) devices are RoHS compliant  
– Decrease total chip programming time over Byte-Pro-  
gram operations  
www.microchip.com  
©2011 Silicon Storage Technology, Inc.  
DS25090A  
10/11  

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