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SST25VF512-20-4I-QAE PDF预览

SST25VF512-20-4I-QAE

更新时间： 2024-09-19 20:08:19
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
23页 256K
描述
512K X 1 FLASH 2.7V PROM, PDSO8, WSON-8

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中文翻译

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SST25VF512-20-4I-QAE 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：SON
包装说明：VSON,针数：8
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.32.00.51风险等级：5.71
最大时钟频率 (fCLK)：20 MHzJESD-30 代码：R-PDSO-N8
JESD-609代码：e3长度：6 mm
内存密度：524288 bit内存集成电路类型：FLASH
内存宽度：1功能数量：1
端子数量：8字数：524288 words
字数代码：512000工作模式：SYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：512KX1封装主体材料：PLASTIC/EPOXY
封装代码：VSON封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, VERY THIN PROFILE并行/串行：SERIAL
峰值回流温度（摄氏度）：260编程电压：2.7 V
认证状态：Not Qualified座面最大高度：0.8 mm
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：MATTE TIN端子形式：NO LEAD
端子节距：1.27 mm端子位置：DUAL
处于峰值回流温度下的最长时间：40类型：NOR TYPE
宽度：5 mmBase Number Matches：1

SST25VF512-20-4I-QAE 数据手册

 浏览型号SST25VF512-20-4I-QAE的Datasheet PDF文件第2页浏览型号SST25VF512-20-4I-QAE的Datasheet PDF文件第3页浏览型号SST25VF512-20-4I-QAE的Datasheet PDF文件第4页浏览型号SST25VF512-20-4I-QAE的Datasheet PDF文件第5页浏览型号SST25VF512-20-4I-QAE的Datasheet PDF文件第6页浏览型号SST25VF512-20-4I-QAE的Datasheet PDF文件第7页 
512 Kbit SPI Serial Flash  
SST25VF512  
SST25VF512512Kb Serial Peripheral Interface (SPI) flash memory  
Data Sheet  
FEATURES:  
•
•
Single 2.7-3.6V Read and Write Operations  
•
Auto Address Increment (AAI) Programming  
– Decrease total chip programming time over  
Byte-Program operations  
End-of-Write Detection  
– Software Status  
Serial Interface Architecture  
– SPI Compatible: Mode 0 and Mode 3  
20 MHz Max Clock Frequency  
Superior Reliability  
•
•
•
•
Hold Pin (HOLD#)  
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
– Suspends a serial sequence to the memory  
without deselecting the device  
•
•
•
Low Power Consumption:  
•
•
•
Write Protection (WP#)  
– Active Read Current: 7 mA (typical)  
– Standby Current: 8 µA (typical)  
– Enables/Disables the Lock-Down function of the  
status register  
Flexible Erase Capability  
Software Write Protection  
– Uniform 4 KByte sectors  
– Uniform 32 KByte overlay blocks  
– Write protection through Block-Protection bits in  
status register  
Fast Erase and Byte-Program:  
Packages Available  
– Chip-Erase Time: 70 ms (typical)  
– Sector- or Block-Erase Time: 18 ms (typical)  
– Byte-Program Time: 14 µs (typical)  
– 8-lead SOIC (4.9mm x 6mm)  
– 8-contact WSON  
PRODUCT DESCRIPTION  
SST’s serial flash family features a four-wire, SPI-com-  
patible interface that allows for a low pin-count package  
occupying less board space and ultimately lowering total  
system costs. SST25VF512 SPI serial flash memory is  
manufactured with SST’s proprietary, high-performance  
CMOS SuperFlash Technology. The split-gate cell design  
and thick-oxide tunneling injector attain better reliability  
and manufacturability compared with alternate  
approaches.  
current, and time of application. Since for any given volt-  
age range, the SuperFlash technology uses less current  
to program and has a shorter erase time, the total energy  
consumed during any Erase or Program operation is less  
than alternative flash memory technologies. The  
SST25VF512 device operates with a single 2.7-3.6V  
power supply.  
The SST25VF512 device is offered in both 8-lead SOIC  
and 8-contact WSON packages. See Figure 1 for the pin  
assignments.  
The SST25VF512 device significantly improves perfor-  
mance, while lowering power consumption. The total  
energy consumed is a function of the applied voltage,  
©2003 Silicon Storage Technology, Inc.  
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.  
These specifications are subject to change without notice.  
S71192-03-000  
1
4/03  
1234567...23

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SST25VF512A-33-4C-QAE SST

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 		512 Kbit SPI Serial Flash
SST25VF512A-33-4C-QAE-T MICROCHIP

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 		SST25VF512A-33-4C-QAE-T
SST25VF512A-33-4C-SA SILICON

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 		EEPROM, 512KX1, Serial, CMOS, PDSO8, 0.150 INCH, MS-012AA, SOIC-8
SST25VF512A-33-4C-SAE SST

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 		512 Kbit SPI Serial Flash
SST25VF512A-33-4C-SAE MICROCHIP

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 		512K X 1 SPI BUS SERIAL EEPROM, PDSO8, 4.90 X 6 MM, ROHS COMPLIANT, MS-012AA, SOIC-8
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 		512 Kbit SPI Serial Flash
SST25VF512A-33-4E-QAE SILICON

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 		EEPROM, 512KX1, Serial, CMOS, 5 X 6 MM, LEAD FREE, WSON-8
SST25VF512A-33-4E-SA SILICON

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 		EEPROM, 512KX1, Serial, CMOS, PDSO8, 0.150 INCH, MS-012AA, SOIC-8

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