Datasheet > SSM3J355R

SSM3J355R

更新时间： 2024-11-18 21:13:23

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
9页	365K
描述
Small Signal Field-Effect Transistor

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中文翻译

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SSM3J355R 技术参数

SSM3J355R

MOSFETs Silicon P-Channel MOS

SSM3J355R

1. Applications

•

Power Management Switches

2. Features

(1) 1.8 V drive

(2) Low drain-source on-resistance

: RDS(ON) = 36.0 mΩ (typ.) (VGS = -1.8 V)

RDS(ON) = 28.0 mΩ (typ.) (VGS = -2.5 V)

RDS(ON) = 23.0 mΩ (typ.) (VGS = -4.5 V)

3. Packaging and Internal Circuit

1: Gate

2: Source

3: Drain

SOT-23F

Start of commercial production

2016-11

2016-11-30

Rev.1.0

12 3 4 5 6 7...9

中文翻译

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