Datasheet > SSM3J35AMFV

SSM3J35AMFV

更新时间： 2024-11-06 14:56:43

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SSM3J35AMFV 数据手册

SSM3J35AMFV

MOSFETs Silicon P-Channel MOS

SSM3J35AMFV

1. Applications

•

Analog Switches

2. Features

(1) 1.2 V drive

(2) Low drain-source on-resistance

: RDS(ON) = 3.2 Ω (typ.) (@VGS = -1.2 V)

RDS(ON) = 2.3 Ω (typ.) (@VGS = -1.5 V)

RDS(ON) = 2.0 Ω (typ.) (@VGS = -1.8 V)

RDS(ON) = 1.5 Ω (typ.) (@VGS = -2.5 V)

RDS(ON) = 1.1 Ω (typ.) (@VGS = -4.5 V)

3. Packaging and Internal Circuit

1: Gate

2: Source

3: Drain

VESM

Start of commercial production

2017-03

2021-02-01

Rev.3.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7 8

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