Datasheet > SQ3426EEV

SQ3426EEV

更新时间： 2024-11-16 09:08:03

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威世 - VISHAY		/
页数	文件大小	规格书
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描述
Automotive N-Channel 60 V (D-S) 175 °C MOSFET

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SQ3426EEV 数据手册

SQ3426EEV

Vishay Siliconix

www.vishay.com

Automotive N-Channel 60 V (D-S) 175 °C MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET^®Power MOSFET

• Typical ESD Protection 800 V

• AEC-Q101 Qualified^c

PRODUCT SUMMARY

V_DS(V)

0.045

0.066

R_DS(on)() at V_GS= 10 V

R_DS(on)() at V_GS= 4.5 V

I_D(A)

Configuration

Single

• 100 % R_gand UIS Tested

• Compliant to RoHS Directive 2002/95/EC

TSOP-6

Top View

(1, 2, 5, 6) D

(3) G

3 mm

2.85 mm

Marking Code: 8Axxx

(4) S

N-Channel MOSFET

ORDERING INFORMATION

Package

TSOP-6

Lead (Pb)-free and Halogen-free

SQ3426EEV-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_C= 25 °C

Continuous Drain Current

I_D

_C= 125 °C

Continuous Source Current (Diode Conduction)

Pulsed Drain Current^a

I_S

I_DM

I_AS

E_AS

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

L = 0.1 mH

T_C= 25 °C

1.6

Maximum Power Dissipation^a

P_D

_C= 125 °C

Operating Junction and Storage Temperature Range

T_J, T_stg

- 55 to + 175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

110

UNIT

Junction-to-Ambient

PCB Mount^b

°C/W

Junction-to-Foot (Drain)

R_thJF

Notes

a. Pulse test; pulse width  300 μs, duty cycle  2 %.

b. When mounted on 1" square PCB (FR-4 material).

c. Parametric verification ongoing.

S11-2124-Rev. C, 07-Nov-11

Document Number: 65351

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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