5秒后页面跳转
SPW17N80C3A PDF预览

SPW17N80C3A

更新时间: 2024-11-15 12:47:03
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲高压局域网
页数 文件大小 规格书
10页 508K
描述
CoolMOS Power Transistor

SPW17N80C3A 技术参数

生命周期:Active包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.75Is Samacsys:N
其他特性:AVALANCHE RATED, HIGH VOLTAGE雪崩能效等级(Eas):670 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:800 V
最大漏极电流 (ID):17 A最大漏源导通电阻:0.29 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-247
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):51 A
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SPW17N80C3A 数据手册

 浏览型号SPW17N80C3A的Datasheet PDF文件第2页浏览型号SPW17N80C3A的Datasheet PDF文件第3页浏览型号SPW17N80C3A的Datasheet PDF文件第4页浏览型号SPW17N80C3A的Datasheet PDF文件第5页浏览型号SPW17N80C3A的Datasheet PDF文件第6页浏览型号SPW17N80C3A的Datasheet PDF文件第7页 
SPW17N80C3  
CoolMOSTM Power Transistor  
Features  
Product Summary  
V DS  
800  
0.29  
88  
V
• New revolutionary high voltage technology  
• Extreme dv/dt rated  
R DS(on)max @ Tj = 25°C  
Q g,typ  
W
nC  
• High peak current capability  
• Qualified according to JEDEC1) for target applications  
• Pb-free lead plating; RoHS compliant  
• Ultra low gate charge  
PG-TO247-3  
• Ultra low effective capacitances  
CoolMOSTM 800V designed for:  
• Industrial application with high DC bulk voltage  
• Switching Application (i.e. active clamp forward)  
Type  
Package  
Marking  
SPW17N80C3  
PG-TO247-3  
17N80C3  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
T C=25 °C  
T C=100 °C  
T C=25 °C  
17  
11  
Continuous drain current  
A
Pulsed drain current2)  
51  
I D,pulse  
E AS  
I D=3.4 A, V DD=50 V  
I D=17 A, V DD=50 V  
Avalanche energy, single pulse  
670  
0.5  
mJ  
2),3)  
2),3)  
E AR  
Avalanche energy, repetitive t AR  
I AR  
17  
A
Avalanche current, repetitive t AR  
MOSFET dv /dt ruggedness  
Gate source voltage  
V DS=0…640 V  
static  
50  
dv /dt  
V GS  
V/ns  
V
±20  
±30  
227  
-55 ... 150  
50  
AC (f >1 Hz)  
T C=25 °C  
P tot  
Power dissipation  
W
T j, T stg  
Operating and storage temperature  
Mounting torque  
°C  
M2.5 screws  
page 1  
Ncm  
Rev. 2.91  
2011-09-27  

SPW17N80C3A 替代型号

型号 品牌 替代类型 描述 数据表
SPW17N80C3 INFINEON

类似代替

Cool MOS⑩ Power Transistor

与SPW17N80C3A相关器件

型号 品牌 获取价格 描述 数据表
SPW17N80C3FKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Met
SPW20N60C2 INFINEON

获取价格

Cool MOS⑩ Power Transistor
SPW20N60C3 INFINEON

获取价格

Cool MOS™ Power Transistor
SPW20N60C3_08 INFINEON

获取价格

Cool MOS Power Transistor
SPW20N60C3FKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, M
SPW20N60CFD INFINEON

获取价格

Cool MOS⑩ Power Transistor
SPW20N60CFD_08 INFINEON

获取价格

Cool MOS Power Transistor
SPW20N60CFDFKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 20.7A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, M
SPW20N60S5 INFINEON

获取价格

Cool MOS⑩ Power Transistor
SPW21N50C3 INFINEON

获取价格

Cool MOS™ Power Transistor