是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | TO-247 |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | compliant | 风险等级: | 5.71 |
其他特性: | AVALANCHE RATED | 雪崩能效等级(Eas): | 340 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 600 V |
最大漏极电流 (ID): | 11 A | 最大漏源导通电阻: | 0.44 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-247 |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 28 A |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SPW11N60CFDXK | INFINEON |
获取价格 |
Power Field-Effect Transistor, 11A I(D), 600V, 0.44ohm, 1-Element, N-Channel, Silicon, Met | |
SPW11N60S5 | INFINEON |
获取价格 |
Cool MOS⑩ Power Transistor | |
SPW11N60S5_08 | INFINEON |
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Cool MOS? Power Transistor | |
SPW11N80C3 | INFINEON |
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Cool MOS Power Transistor | |
SPW11N80C3_08 | INFINEON |
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New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated | |
SPW11N80C3FKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 11A I(D), 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Met | |
SPW12N50C3 | INFINEON |
获取价格 |
Cool MOS Power Transistor | |
SPW12N50C3_08 | INFINEON |
获取价格 |
COOL MOS POWER TRANSISTOR | |
SPW15N60C3 | INFINEON |
获取价格 |
Cool MOS Power Transistor | |
SPW15N60C3_08 | INFINEON |
获取价格 |
Cool MOS Power Transistor |