Datasheet > SPW11N80C3_08

SPW11N80C3_08

更新时间： 2024-11-15 09:08:27

品牌	Logo	应用领域
英飞凌 - INFINEON		栅极
页数	文件大小	规格书
11页	680K
描述
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

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SPW11N80C3_08 数据手册

SPW11N80C3

CoolMOS^TMPower Transistor

Features

Product Summary

V _DS

800

0.45

• New revolutionary high voltage technology

• Extreme dv/dt rated

R _DS(on)max@ T_j= 25°C

Q _g,typ

• High peak current capability

• Qualified according to JEDEC¹⁾for target applications

• Pb-free lead plating; RoHS compliant

• Ultra low gate charge

PG-TO247-3

• Ultra low effective capacitances

CoolMOS^TM800V designed for:

• Industrial application with high DC bulk voltage

• Switching Application (i.e. active clamp forward)

Type

Package

Marking

SPW11N80C3

PG-TO247-3

11N80C3

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _C=25 °C

7.1

Continuous drain current

T _C=100 °C

Pulsed drain current²⁾

I _D,pulse

E _AS

T _C=25 °C

I _D=2.2 A, V _DD=50 V

I _D=11 A, V _DD=50 V

Avalanche energy, single pulse

470

0.2

2),3)

E _AR

Avalanche energy, repetitive t _AR

I _AR

Avalanche current, repetitive t _AR

MOSFET dv /dt ruggedness

Gate source voltage

V _DS=0…640 V

static

dv /dt

V _GS

V/ns

±20

±30

156

-55 ... 150

AC (f >1 Hz)

T _C=25 °C

P _tot

Power dissipation

T _j, T _stg

Operating and storage temperature

Mounting torque

°C

M2.5 screws

page 1

Ncm

Rev. 2.9

2008-10-15

Please note the new package dimensions arccording to PCN 2009-134-A

12 3 4 5 6 7...11

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