5秒后页面跳转
SPW15N60C3 PDF预览

SPW15N60C3

更新时间: 2024-11-21 22:21:27
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管脉冲局域网
页数 文件大小 规格书
11页 240K
描述
Cool MOS™ Power Transistor

SPW15N60C3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:TO-247AD
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliant风险等级:8.47
Is Samacsys:N其他特性:AVALANCHE RATED
雪崩能效等级(Eas):460 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (Abs) (ID):15 A
最大漏极电流 (ID):15 A最大漏源导通电阻:0.28 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-247AD
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):156 W最大脉冲漏极电流 (IDM):45 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

SPW15N60C3 数据手册

 浏览型号SPW15N60C3的Datasheet PDF文件第2页浏览型号SPW15N60C3的Datasheet PDF文件第3页浏览型号SPW15N60C3的Datasheet PDF文件第4页浏览型号SPW15N60C3的Datasheet PDF文件第5页浏览型号SPW15N60C3的Datasheet PDF文件第6页浏览型号SPW15N60C3的Datasheet PDF文件第7页 
SPW15N60C3  
Final data  
Cool MOS™ Power Transistor  
V
@ T  
650  
0.28  
15  
V
A
DS  
jmax  
Feature  
R
DS(on)  
New revolutionary high voltage technology  
Ultra low gate charge  
Periodic avalanche rated  
I
D
P-TO247  
Extreme dv/dt rated  
Ultra low effective capacitances  
Improved transconductance  
Type  
Package  
Ordering Code  
Marking  
SPW15N60C3  
P-TO247  
Q67040-S4604  
15N60C3  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
A
Continuous drain current  
I
D
T = 25 °C  
15  
9.4  
45  
C
T = 100 °C  
C
Pulsed drain current, t limited by T  
I
p
jmax  
D puls  
460  
mJ  
Avalanche energy, single pulse  
E
AS  
I = 7.5 A, V = 50 V  
Avalanche energy, repetitive t limited by T  
D
DD  
1)  
jmax  
E
0.8  
AR  
AR  
I = 15 A, V = 50 V  
D
DD  
15  
6
A
V/ns  
Avalanche current, repetitive t limited by T  
Reverse diode dv/dt  
I
jmax AR  
AR  
dv/dt  
I =15A, V =480V, T =125°C  
S
DS  
j
Gate source voltage static  
V
V
P
V
±20  
±30  
156  
GS  
GS  
tot  
Gate source voltage AC (f >1Hz)  
Power dissipation, T = 25°C  
Operating and storage temperature  
W
°C  
C
T , T  
-55... +150  
j
stg  
Page 1  
2003-09-17  

SPW15N60C3 替代型号

型号 品牌 替代类型 描述 数据表
SPA15N65C3 INFINEON

功能相似

CoolMOS Power Transistor
STW19NM65N STMICROELECTRONICS

功能相似

N-channel 650 V - 0.25 Ω - 15.5 A - TO-220/FP
SPI15N65C3 INFINEON

功能相似

CoolMOSTM Power Transistor Features Extreme dv/dt rated

与SPW15N60C3相关器件

型号 品牌 获取价格 描述 数据表
SPW15N60C3_08 INFINEON

获取价格

Cool MOS Power Transistor
SPW15N60CFD INFINEON

获取价格

Power Field-Effect Transistor, 13.4A I(D), 600V, 0.33ohm, 1-Element, N-Channel, Silicon, M
SPW16N50C3 INFINEON

获取价格

Cool MOS™ Power Transistor
SPW16N50C3_08 INFINEON

获取价格

COOL MOS POWER TRANSISTOR
SPW17N80C2 INFINEON

获取价格

Cool MOS Power Transistor
SPW17N80C3 INFINEON

获取价格

Cool MOS⑩ Power Transistor
SPW17N80C3_08 INFINEON

获取价格

CoolMOSTM Power Transistor Features New revolutionary high voltage technology Extreme dv/d
SPW17N80C3A INFINEON

获取价格

CoolMOS Power Transistor
SPW17N80C3FKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Met
SPW20N60C2 INFINEON

获取价格

Cool MOS⑩ Power Transistor