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SPW12N50C3 PDF预览

SPW12N50C3

更新时间: 2024-11-14 22:21:27
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管脉冲高压局域网
页数 文件大小 规格书
11页 255K
描述
Cool MOS™ Power Transistor

SPW12N50C3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-247AD
包装说明:GREEN, PLASTIC PACKAGE-3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:1 week风险等级:5.71
Is Samacsys:N其他特性:AVALANCHE RATED, HIGH VOLTAGE
雪崩能效等级(Eas):340 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:500 V最大漏极电流 (Abs) (ID):11.6 A
最大漏极电流 (ID):11.6 A最大漏源导通电阻:0.38 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-247AD
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):125 W最大脉冲漏极电流 (IDM):34.8 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

SPW12N50C3 数据手册

 浏览型号SPW12N50C3的Datasheet PDF文件第2页浏览型号SPW12N50C3的Datasheet PDF文件第3页浏览型号SPW12N50C3的Datasheet PDF文件第4页浏览型号SPW12N50C3的Datasheet PDF文件第5页浏览型号SPW12N50C3的Datasheet PDF文件第6页浏览型号SPW12N50C3的Datasheet PDF文件第7页 
SPW12N50C3  
Final data  
Cool MOS™ Power Transistor  
Feature  
New revolutionary high voltage technology  
Ultra low gate charge  
V
@ T  
560  
0.38  
11.6  
V
A
DS  
jmax  
R
DS(on)  
I
D
P-TO247  
Periodic avalanche rated  
Extreme dv/dt rated  
Ultra low effective capacitances  
Improved transconductance  
Type  
SPW12N50C3  
Package  
P-TO247  
Ordering Code  
Q67040-S4580  
Marking  
12N50C3  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
A
Continuous drain current  
I
D
T = 25 °C  
11.6  
7
C
T = 100 °C  
C
34.8  
340  
Pulsed drain current, t limited by T  
Avalanche energy, single pulse  
I
E
p
jmax  
D puls  
mJ  
AS  
I = 5.5 A, V = 50 V  
Avalanche energy, repetitive t limited by T  
D
DD  
1)  
jmax  
E
0.6  
AR  
AR  
I = 11.6 A, V = 50 V  
D
DD  
11.6  
6
A
V/ns  
Avalanche current, repetitive t limited by T  
Reverse diode dv/dt  
I
jmax AR  
AR  
dv/dt  
I =11.6A, V =480V, T =125°C  
S
DS  
j
Gate source voltage  
V
V
P
V
±20  
±30  
125  
GS  
GS  
tot  
Gate source voltage AC (f >1Hz)  
Power dissipation, T = 25°C  
Operating and storage temperature  
W
°C  
C
T , T  
-55... +150  
j
stg  
Page 1  
2003-06-30  

SPW12N50C3 替代型号

型号 品牌 替代类型 描述 数据表
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