Datasheet > SPW11N60CFD_08

SPW11N60CFD_08

更新时间： 2024-11-15 09:08:27

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
13页	748K
描述
Cool MOS? Power Transistor

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中文翻译

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数据手册

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SPW11N60CFD_08 数据手册

SPW11N60CFD

Cool MOS™ Power Transistor

Feature

@ T

650

0.44

Ω

jmax

DS(on)

• New revolutionary high voltage technology

• Ultra low gate charge

PG-TO247

• Periodic avalanche rated

• Extreme dv/dt rated

• High peak current capability

• Intrinsic fast-recovery body diode

• Extreme low reverse recovery charge

Type

Package

Ordering Code

Marking

SPW11N60CFD

PG-TO247

Q67040-S4619

11N60CFD

Maximum Ratings

Parameter

Symbol

Value

Unit

Continuous drain current

T = 25 °C

T = 100 °C

340

Pulsed drain current, t limited by T

D puls

jmax

Avalanche energy, single pulse

I = 5.5 A, V = 50 V

0.6

Avalanche energy, repetitive t limited by T

jmax

I = 11 A, V = 50 V

Avalanche current, repetitive t limited by T

Reverse diode dv/dt

dv/dt

V/ns

I =11A, V =480V, T =125°C

Gate source voltage

tot

Gate source voltage AC (f >1Hz)

125

Power dissipation, T = 25°C

°C

Operating and storage temperature

T , T

-55... +150

stg

Rev. 2.5

Page 1

2008-04-17

Please note the new package dimensions arccording to PCN 2009-134-A

12 3 4 5 6 7...13

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