5秒后页面跳转
SPP15P10PLG PDF预览

SPP15P10PLG

更新时间: 2024-09-28 06:13:27
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管脉冲局域网
页数 文件大小 规格书
10页 412K
描述
SIPMOS® Power-Transistor Features P-Channel Enhancement mode

SPP15P10PLG 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.64
Is Samacsys:N其他特性:LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
雪崩能效等级(Eas):230 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):15 A
最大漏极电流 (ID):15 A最大漏源导通电阻:0.2 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):128 W
最大脉冲漏极电流 (IDM):60 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管元件材料:SILICONBase Number Matches:1

SPP15P10PLG 数据手册

 浏览型号SPP15P10PLG的Datasheet PDF文件第2页浏览型号SPP15P10PLG的Datasheet PDF文件第3页浏览型号SPP15P10PLG的Datasheet PDF文件第4页浏览型号SPP15P10PLG的Datasheet PDF文件第5页浏览型号SPP15P10PLG的Datasheet PDF文件第6页浏览型号SPP15P10PLG的Datasheet PDF文件第7页 
SPP15P10PL G  
SPD15P10PL G  
SIPMOS® Power-Transistor  
Product Summary  
Features  
V DS  
-100  
0.20  
-15  
V
A
• P-Channel  
R DS(on),max  
I D  
• Enhancement mode  
• logic level  
• Avalanche rated  
PG-TO220-3  
PG-TO252-3  
• Pb-free lead plating; RoHS compliant  
Type  
Package  
Marking  
15P10PL  
15P10PL  
Lead free Packing Tape and Reel information  
SPP15P10PL G PG-TO220-3  
SPD15P10PL G PG-TO252-3  
Yes  
Yes  
Non dry  
Non dry  
50 pcs / tube  
1000 pcs / reel  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
-15  
Parameter  
Symbol Conditions  
Unit  
I D  
T C=25 °C  
T C=100 °C  
T C=25 °C  
Continuous drain current  
A
11.3  
I D,pulse  
E AS  
-60  
Pulsed drain current  
230  
I D=-15 A, R GS=25  
Avalanche energy, single pulse  
Gate source voltage  
mJ  
V
V GS  
±20  
P tot  
T C=25 °C  
128  
Power dissipation  
W
°C  
T j, T stg  
-55 ... 175  
1C (1kV to 2kV)  
260 °C  
55/175/56  
Operating and storage temperature  
ESD Class  
Soldering temperature  
IEC climatic category; DIN IEC 68-1  
Rev 1.3  
page 1  
2009-10-27  

与SPP15P10PLG相关器件

型号 品牌 获取价格 描述 数据表
SPP15P10PLGHKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 15A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Meta
SPP15P10PLH INFINEON

获取价格

Power Field-Effect Transistor, 15A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Meta
SPP15P10PLHXKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 15A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Meta
SPP16N50C3 INFINEON

获取价格

Cool MOS⑩ Power Transistor
SPP16N50C3_07 INFINEON

获取价格

New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
SPP16N50C3_09 INFINEON

获取价格

New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
SPP16N50C3HKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 16A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Met
SPP17N80C2 INFINEON

获取价格

Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Met
SPP17N80C3 INFINEON

获取价格

Cool MOS⑩ Power Transistor
SPP17N80C3_07 INFINEON

获取价格

New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate