Datasheet > SPP16N50C3_09

SPP16N50C3_09

更新时间： 2024-09-28 06:13:27

品牌	Logo	应用领域
英飞凌 - INFINEON		栅极
页数	文件大小	规格书
14页	724K
描述
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

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SPP16N50C3_09 数据手册

SPP16N50C3

SPI16N50C3, SPA16N50C3

Cool MOS™ Power Transistor

Feature

• New revolutionary high voltage technology

@ T

560

0.28

Ω

jmax

DS(on)

• Ultra low gate charge

PG-TO220FP

PG-TO262

PG-TO220

• Periodic avalanche rated

• Extreme dv/dt rated

• Ultra low effective capacitances

• Improved transconductance

P-TO220-3-31

P-TO220-3-1

• PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)

Type

SPP16N50C3

Package

PG-TO220

Ordering Code

Q67040-S4583

Marking

16N50C3

SPI16N50C3

SPA16N50C3

PG-TO262

PG-TO220FP

Q67040-S4582

16N50C3

SP000216351

Maximum Ratings

Parameter

Symbol

Value

Unit

SPP_I

SPA

Continuous drain current

= 25 °C

= 100 °C

Pulsed drain current,

limited by

D puls

jmax

Avalanche energy, single pulse

460

=8,

=50V

Avalanche energy, repetitive

limited by

0.64

jmax

=16A,

=50V

Avalanche current, repetitive

Gate source voltage

limited by

±20

jmax

tot

Gate source voltage AC (f >1Hz)

Power dissipation, T = 25°C

160

-55...+150

Operating and storage temperature

dv/dt

°C

V/ns

stg

Reverse diode dv/dt

age 1

Rev. 3.2

2009-12-22

12 3 4 5 6 7...14

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