Datasheet > SPP04N60C2

SPP04N60C2

更新时间： 2024-11-14 22:21:27

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管脉冲局域网
页数	文件大小	规格书
14页	166K
描述
Cool MOS⑩ Power Transistor

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中文翻译

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数据手册

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SPP04N60C2 数据手册

SPP04N60C2, SPB04N60C2

SPA04N60C2

Final data

Cool MOS™ Power Transistor

Feature

Product Summary

• New revolutionary high voltage technology

• Ultra low gate charge

@ T

jmax

650

0.95

4.5

Ω

DS(on)

• Periodic avalanche rated

• Extreme dv/dt rated

• Ultra low effective capacitances

P-TO220-3-31 P-TO263-3-2

P-TO220-3-1

P-TO220-3-31

Type

Package

Ordering Code

Marking

SPP04N60C2

P-TO220-3-1 Q67040-S4304

04N60C2

SPB04N60C2

SPA04N60C2

P-TO263-3-2 Q67040-S4305

P-TO220-3-31 Q67040-S4330

04N60C2

Maximum Ratings

Parameter

Symbol

Value

Unit

SPA

SPP_B

Continuous drain current

T = 25 °C

4.5

2.8

4.5

T = 100 °C

2.8

Pulsed drain current, t limited by T

D puls

jmax

Avalanche energy, single pulse

130

I =3.6A, V =50V

Avalanche energy, repetitive t limited by T

0.4

jmax

I =4.5A, V =50V

Avalanche current, repetitive t limited by T

4.5

jmax

Reverse diode dv/dt

dv/dt

V/ns

I = 4.5 A, V < V , di/dt=100A/µs, T =150°C

jmax

Gate source voltage

±20

±30

±20

±30

tot

Gate source voltage AC (f >1Hz)

Power dissipation, T = 25°C

Operating and storage temperature

T , T

-55...+150

°C

stg

Page 1

2002-08-12

12 3 4 5 6 7...14

中文翻译

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