生命周期: | Obsolete | 包装说明: | GREEN, PLASTIC, TO-262, IPAK-3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.82 | 其他特性: | AVALANCHE RATED |
雪崩能效等级(Eas): | 230 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 650 V | 最大漏极电流 (ID): | 7.3 A |
最大漏源导通电阻: | 0.0006 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-262AA | JESD-30 代码: | R-PSIP-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 21.9 A |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
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