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SPI15N60C3 PDF预览

SPI15N60C3

更新时间: 2024-11-01 22:21:27
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
13页 264K
描述
Cool MOS⑩ Power Transistor

SPI15N60C3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-262AA
包装说明:TO-262, I2PAK-3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:1 week风险等级:5.3
Is Samacsys:N其他特性:AVALANCHE RATED
雪崩能效等级(Eas):460 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (Abs) (ID):15 A
最大漏极电流 (ID):15 A最大漏源导通电阻:0.28 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-262AA
JESD-30 代码:R-PSIP-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):156 W
最大脉冲漏极电流 (IDM):45 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:MATTE TIN端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SPI15N60C3 数据手册

 浏览型号SPI15N60C3的Datasheet PDF文件第2页浏览型号SPI15N60C3的Datasheet PDF文件第3页浏览型号SPI15N60C3的Datasheet PDF文件第4页浏览型号SPI15N60C3的Datasheet PDF文件第5页浏览型号SPI15N60C3的Datasheet PDF文件第6页浏览型号SPI15N60C3的Datasheet PDF文件第7页 
SPP15N60C3, SPI15N60C3  
SPA15N60C3  
Final data  
Cool MOS™ Power Transistor  
V
@ T  
650  
0.28  
15  
V
A
DS  
jmax  
Feature  
R
DS(on)  
New revolutionary high voltage technology  
Ultra low gate charge  
I
D
P-TO220-3-31  
P-TO262-3-1  
P-TO220-3-1  
Periodic avalanche rated  
Extreme dv/dt rated  
3
Ultra low effective capacitances  
Improved transconductance  
2
1
P-TO220-3-31  
P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)  
Type  
Package  
Ordering Code  
Marking  
SPP15N60C3  
SPI15N60C3  
SPA15N60C3  
P-TO220-3-1 Q67040-S4600  
P-TO262-3-1 Q67040-S4601  
P-TO220-3-31 Q67040-S4603  
15N60C3  
15N60C3  
15N60C3  
Maximum Ratings  
Parameter  
Symbol  
Value  
SPP_I  
Unit  
SPA  
Continuous drain current  
I
A
D
1)  
T = 25 °C  
15  
9.4  
15  
C
1)  
T = 100 °C  
9.4  
C
Pulsed drain current, t limited by T  
I
D puls  
45  
45  
A
p
jmax  
Avalanche energy, single pulse  
E
460  
460  
mJ  
AS  
I =7.5A, V =50V  
D
DD  
2)  
E
Avalanche energy, repetitive t limited by T  
0.8  
0.8  
AR  
AR  
jmax  
I =15A, V =50V  
D
DD  
Avalanche current, repetitive t limited by T  
Gate source voltage static  
I
15  
15  
±20  
±30  
34  
A
V
AR  
jmax  
AR  
V
V
P
±20  
±30  
156  
GS  
GS  
tot  
Gate source voltage AC (f >1Hz)  
Power dissipation, T = 25°C  
W
C
Operating and storage temperature  
T , T  
-55...+150  
°C  
j
stg  
Page 1  
2003-07-01  

SPI15N60C3 替代型号

型号 品牌 替代类型 描述 数据表
IPI60R280C6XKSA1 INFINEON

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