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SPI20N60CFD PDF预览

SPI20N60CFD

更新时间: 2024-10-01 09:09:11
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
12页 357K
描述
Cool MOS? Power Transistor Feature New revolutionary high voltage technology

SPI20N60CFD 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-262AA
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:compliantHTS代码:8541.29.00.95
风险等级:5.72雪崩能效等级(Eas):690 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (Abs) (ID):20.7 A最大漏极电流 (ID):20.7 A
最大漏源导通电阻:0.22 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-262AAJESD-30 代码:R-PSIP-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):208 W最大脉冲漏极电流 (IDM):52 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:MATTE TIN
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管元件材料:SILICON
Base Number Matches:1

SPI20N60CFD 数据手册

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SPI20N60CFD  
Cool MOS™ Power Transistor  
Feature  
V
@ T  
650  
0.22  
20.7  
V
A
DS  
jmax  
R
DS(on)  
New revolutionary high voltage technology  
I
D
Worldwide best R  
in TO 220  
DS(on)  
PG-TO262  
Ultra low gate charge  
Periodic avalanche rated  
Extreme dv/dt rated  
High peak current capability  
Intrinsic fast-recovery body diode  
Extreme low reverse recovery charge  
Type  
Package  
Pb-free  
Marking  
SPI20N60CFD  
PG-TO262  
Yes  
20N60CFD  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
A
Continuous drain current  
I
D
T = 25 °C  
20.7  
13.1  
52  
C
T = 100 °C  
C
Pulsed drain current, t limited by T  
I
D puls  
p
jmax  
690  
mJ  
Avalanche energy, single pulse  
E
E
I
AS  
I = 10 A, V = 50 V  
D
DD  
1)  
1
Avalanche energy, repetitive t limited by T  
AR  
jmax  
jmax  
AR  
I = 20 A, V = 50 V  
D
DD  
20  
40  
A
Avalanche current, repetitive t limited by T  
AR  
AR  
Reverse diode dv/dt  
dv/dt  
V/ns  
V
I =20.7A, V =480V, T =125°C  
S
DS  
j
Gate source voltage  
V
20  
30  
GS  
Gate source voltage AC (f >1Hz)  
V
GS  
208  
W
Power dissipation, T = 25°C  
P
C
tot  
°C  
Operating and storage temperature  
T , T  
-55... +150  
j
stg  
Rev. 2.5  
Page 1  
2007-02-01  

SPI20N60CFD 替代型号

型号 品牌 替代类型 描述 数据表
IPI65R190CFD INFINEON

类似代替

Metal Oxide Semiconduvtor Field Effect Transistor
SPI20N60C3 INFINEON

类似代替

Cool MOS™ Power Transistor

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