Datasheet > SPI20N65C3

SPI20N65C3

更新时间： 2024-09-30 22:21:27

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
14页	300K
描述
Cool MOS⑩ Power Transistor

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中文翻译

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数据手册
替代型号

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SPI20N65C3 数据手册

SPP20N65C3, SPA20N65C3

SPI20N65C3

Cool MOS™ Power Transistor

Feature

• New revolutionary high voltage technology

@ T

650

0.19

20.7

Ω

jmax

DS(on)

• Worldwide best R

in TO 220

DS(on)

P-TO262-3-1

P-TO220-3-31 P-TO220-3-1

• Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dt rated

• High peak current capability

• Improved transconductance

P-TO220-3-31

Type

Package

Ordering Code

Marking

20N65C3

SPP20N65C3

SPA20N65C3

SPI20N65C3

P-TO220-3-1 Q67040-S4556

P-TO220-3-31 Q67040-S4555

P-TO262-3-1 Q67040-S4560

Maximum Ratings

Parameter

Symbol

Value

SPP_I

Unit

SPA

Continuous drain current

T = 25 °C

20.7

13.1

20.7

T = 100 °C

13.1

62.1

690

Pulsed drain current,

limited by

D puls

62.1

690

jmax

Avalanche energy, single pulse

I =3.5A, V =50V

Avalanche energy, repetitive

limited by

jmax

I =7A, V =50V

Avalanche current, repetitive

jmax

Gate source voltage

±20

tot

Gate source voltage AC (f >1Hz)

208

-55...+150

Power dissipation, T = 25°C

34.5

Operating and storage temperature

°C

stg

Page 1

2003-08-15

12 3 4 5 6 7...14

中文翻译

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SPI20N65C3 替代型号

型号	品牌	替代类型	描述	数据表
IPI65R190C6XKSA1	INFINEON	类似代替	Power Field-Effect Transistor, 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide S
IPI65R190C6	INFINEON	类似代替	650V CoolMOS C6 Power Transistor

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