Datasheet > SPI-235-19

SPI-235-19

更新时间： 2024-09-30 22:21:27

品牌	Logo	应用领域
三洋 - SANYO		晶体晶体管
页数	文件大小	规格书
6页	41K
描述
Ultraminiature photointerrupter (single-transistor type)

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中文翻译

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数据手册

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SPI-235-19 数据手册

Ordering number : EN6024

GaAs Infrared LED

SPI-235-19

Ultraminiature photointerrupter

(single-transistor type)

Features

• GaAs Infrared LED plus Single Phototransistor

• Photo-Interrupter

• Contact type

• Compact type : H3.25 ✕ L5.0 ✕ W4.5mm

Absolute Maximum Ratings at Ta=25°C, 65%RH

Parameter

Symbol

Rating

Unit

Forward Current

Reverse Voltage

Input LED

Power Dissipation

Collector-Emitter Voltage

CEO

ECO

Output

Emitter-Collector Voltage

Collector Curren

Phototransistor

°C

Power Dissipation

Operating Temperature

Storage Temperature

Topr

Tstg

Tsol

--20 to +80

--30 to +85

260

°C

Soldering Temperature

°C

Soldering conditions : time : max. 3sec; clearance : min. 1mm from lower stay

Electro-Optical Characteristics at Ta=25°C, 65%RH

Parameter

Symbol

Condition

I =10mA

Min.

1.0

Typ.

1.15

Max.

1.4

Unit

Forward Voltage

Reverse Current

Dark Current

Input

V = 5 V

1 0

µ A

µA

Output

I =0mA, V =10V

200

1000

CEO

Collector Output Current

I =10mA,V =5V

200

Collector Emitter

Saturation Voltage

Coupled

(sat) I =10mA, I =100µA

0.5

Rise Time

Fall Time

µ s

=5V, R =100Ω

I =1mA

Measurement Circuit of Collector Current

=5V

IF=10mA

Table of Classification of Collector Output

Class

Ic (µA)

1000 to 450 650 to 300 450 to 200

SANYO Electric Co.,Ltd. Sem iconductor Com pany

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

(

)

72199 GI, MI No.6024 1/6

12 3 4 5 6

中文翻译

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