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SPI16N50C3HKSA1 PDF预览

SPI16N50C3HKSA1

更新时间: 2024-11-23 20:08:19
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
14页 724K
描述
Power Field-Effect Transistor, 16A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3

SPI16N50C3HKSA1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-262AA
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.75其他特性:AVALANCHE RATED
雪崩能效等级(Eas):460 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:500 V最大漏极电流 (ID):16 A
最大漏源导通电阻:0.28 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-262AAJESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):48 A
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SPI16N50C3HKSA1 数据手册

 浏览型号SPI16N50C3HKSA1的Datasheet PDF文件第2页浏览型号SPI16N50C3HKSA1的Datasheet PDF文件第3页浏览型号SPI16N50C3HKSA1的Datasheet PDF文件第4页浏览型号SPI16N50C3HKSA1的Datasheet PDF文件第5页浏览型号SPI16N50C3HKSA1的Datasheet PDF文件第6页浏览型号SPI16N50C3HKSA1的Datasheet PDF文件第7页 
SPP16N50C3  
SPI16N50C3, SPA16N50C3  
Cool MOS™ Power Transistor  
Feature  
New revolutionary high voltage technology  
V
@ T  
560  
0.28  
16  
V
A
DS  
jmax  
R
DS(on)  
I
D
Ultra low gate charge  
PG-TO220FP  
PG-TO262  
PG-TO220  
Periodic avalanche rated  
Extreme dv/dt rated  
2
3
Ultra low effective capacitances  
Improved transconductance  
2
3
2
1
1
P-TO220-3-31  
P-TO220-3-1  
PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)  
Type  
SPP16N50C3  
Package  
PG-TO220  
Ordering Code  
Q67040-S4583  
Marking  
16N50C3  
SPI16N50C3  
SPA16N50C3  
PG-TO262  
PG-TO220FP  
Q67040-S4582  
16N50C3  
16N50C3  
SP000216351  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
SPP_I  
SPA  
Continuous drain current  
I
A
D
1)  
T
= 25 °C  
16  
10  
16  
C
1)  
T
= 100 °C  
10  
C
Pulsed drain current,  
t
limited by  
T
I
D puls  
48  
48  
A
p
jmax  
Avalanche energy, single pulse  
E
460  
460  
mJ  
AS  
I
=8,  
V
=50V  
D
DD  
2)  
E
Avalanche energy, repetitive  
t
limited by  
T
0.64  
0.64  
AR  
AR  
jmax  
I
=16A,  
V
=50V  
D
DD  
Avalanche current, repetitive  
Gate source voltage  
t
limited by  
T
I
AR  
16  
±20  
30  
16  
±20  
30  
A
V
AR  
jmax  
V
V
P
GS  
GS  
tot  
Gate source voltage AC (f >1Hz)  
Power dissipation, T = 25°C  
160  
34  
W
C
-55...+150  
Operating and storage temperature  
T
dv/dt  
,
T
°C  
V/ns  
j
stg  
6)  
Reverse diode dv/dt  
15  
age 1  
Rev. 3.2  
p
2009-12-22  

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