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SPI11N65C3HKSA1 PDF预览

SPI11N65C3HKSA1

更新时间: 2024-11-23 21:17:47
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
15页 569K
描述
Power Field-Effect Transistor, 11A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3

SPI11N65C3HKSA1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-262AA
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:compliant风险等级:5.71
其他特性:AVALANCHE RATED雪崩能效等级(Eas):340 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:650 V
最大漏极电流 (ID):11 A最大漏源导通电阻:0.38 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-262AA
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):33 A认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SPI11N65C3HKSA1 数据手册

 浏览型号SPI11N65C3HKSA1的Datasheet PDF文件第2页浏览型号SPI11N65C3HKSA1的Datasheet PDF文件第3页浏览型号SPI11N65C3HKSA1的Datasheet PDF文件第4页浏览型号SPI11N65C3HKSA1的Datasheet PDF文件第5页浏览型号SPI11N65C3HKSA1的Datasheet PDF文件第6页浏览型号SPI11N65C3HKSA1的Datasheet PDF文件第7页 
SPP11N65C3,SPA11N65C3  
SPI11N65C3  
Cool MOS™ Power Transistor  
Feature  
V
R
650  
0.38  
11  
V
A
D
S  
DS(on)  
New revolutionary high voltage technology  
Ultra low gate charge  
I
D
PG-TO262  
PG-TO220FP PG-TO220  
Periodic avalanche rated  
Extreme dv/dt rated  
High peak current capability  
Improved transconductance  
Type  
Package  
Ordering Code  
Q67040-S4557  
Marking  
SPP11N65C3  
SPA11N65C3  
PG-TO220  
11N65C3  
11N65C3  
11N65C3  
PG-TO220FP SP000216318  
PG-TO262 Q67040-S4561  
SPI11N65C3  
Maximum Ratings  
Parameter  
Symbol  
Value  
SPP_I  
Unit  
SPA  
Continuous drain current  
I
A
D
1)  
T = 25 °C  
11  
7
11  
C
1)  
T = 100 °C  
7
C
Pulsed drain current, t limited by T  
I
D puls  
33  
33  
A
p
jmax  
Avalanche energy, single pulse  
E
340  
340  
mJ  
AS  
I =2.5A, V =50V  
D
DD  
2)  
E
Avalanche energy, repetitive t limited by T  
0.6  
0.6  
AR  
AR  
jmax  
jmax  
I =4A, V =50V  
D
DD  
Avalanche current, repetitive t limited by T  
I
4
20  
4
A
V
AR  
AR  
Gate source voltage  
V
V
P
20  
30  
33  
GS  
GS  
Gate source voltage AC (f >1Hz)  
30  
Power dissipation, T = 25°C  
125  
W
C
tot  
Operating and storage temperature  
T , T  
j
-55...+150  
°C  
stg  
Rev. 2.91  
Page 1  
2009-11-30  

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