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SMMBT3906WT1G PDF预览

SMMBT3906WT1G

更新时间: 2024-02-11 17:26:12
品牌 Logo 应用领域
安森美 - ONSEMI 放大器光电二极管晶体管
页数 文件大小 规格书
13页 134K
描述
General Purpose Transistors

SMMBT3906WT1G 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:4 weeks风险等级:1.55
最大集电极电流 (IC):0.2 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):30
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
参考标准:AEC-Q101表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHz最大关闭时间(toff):300 ns
最大开启时间(吨):70 nsBase Number Matches:1

SMMBT3906WT1G 数据手册

 浏览型号SMMBT3906WT1G的Datasheet PDF文件第2页浏览型号SMMBT3906WT1G的Datasheet PDF文件第3页浏览型号SMMBT3906WT1G的Datasheet PDF文件第4页浏览型号SMMBT3906WT1G的Datasheet PDF文件第5页浏览型号SMMBT3906WT1G的Datasheet PDF文件第6页浏览型号SMMBT3906WT1G的Datasheet PDF文件第7页 
MMBT3904WT1G, NPN,  
SMMBT3904WT1G, NPN,  
MMBT3906WT1G, PNP,  
SMMBT3906WT1G, PNP  
General Purpose  
Transistors  
www.onsemi.com  
NPN and PNP Silicon  
COLLECTOR  
3
These transistors are designed for general purpose amplifier  
applications. They are housed in the SOT−323/SC−70 package which  
is designed for low power surface mount applications.  
1
BASE  
Features  
2
S Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements; AEC−Q101 Qualified and  
PPAP Capable  
EMITTER  
3
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
SC−70 (SOT−323)  
CASE 419  
STYLE 3  
Compliant  
1
2
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
MARKING DIAGRAM  
CollectorEmitter Voltage  
V
V
V
Vdc  
CEO  
CBO  
EBO  
MMBT3904WT1, SMMBT3904WT1  
MMBT3906WT1, SMMBT3906WT1  
40  
−40  
xx M G  
CollectorBase Voltage  
Vdc  
Vdc  
G
MMBT3904WT1, SMMBT3904WT1  
MMBT3906WT1, SMMBT3906WT1  
60  
−40  
1
xx = AM for MMBT3904WT1,  
SMMBT3904WT  
EmitterBase Voltage  
MMBT3904WT1, SMMBT3904WT1  
MMBT3906WT1, SMMBT3906WT1  
6.0  
−5.0  
= 2A for MMBT3906WT1,  
SMMBT3906WT1  
= Date Code*  
Collector Current − Continuous  
MMBT3904WT1, SMMBT3904WT1  
MMBT3906WT1, SMMBT3906WT1  
I
C
mAdc  
M
G
200  
−200  
= Pb−Free Package  
(Note: Microdot may be in either location)  
THERMAL CHARACTERISTICS  
Characteristic  
*Date Code orientation may vary depending up-  
on manufacturing location.  
Symbol  
Max  
Unit  
Total Device Dissipation (Note 1)  
P
D
150  
mW  
@T = 25°C  
A
ORDERING INFORMATION  
Thermal Resistance, Junction−to−Ambient  
Junction and Storage Temperature  
R
833  
°C/W  
°C  
q
JA  
Device  
Package  
Shipping  
T , T  
J
−55 to +150  
stg  
MMBT3904WT1G,  
SMMBT3904WT1G  
SC−70/  
SOT−323  
(Pb−Free)  
3000 / Tape &  
Reel  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum  
recommended footprint.  
MMBT3906WT1G,  
SMMBT3906WT1G  
SC−70/  
SOT−323  
(Pb−Free)  
3000 / Tape &  
Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2015  
1
Publication Order Number:  
November, 2015 − Rev. 9  
MMBT3904WT1/D  
 

SMMBT3906WT1G 替代型号

型号 品牌 替代类型 描述 数据表
MMBT3906WT1G ONSEMI

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