Datasheet > SMMBT4401L

SMMBT4401L

更新时间： 2024-11-21 01:17:27

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	153K
描述
Switching Transistor NPN Silicon

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SMMBT4401L 数据手册

MMBT4401L, SMMBT4401L

Switching Transistor

NPN Silicon

Features

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

http://onsemi.com

COLLECTOR

• AEC−Q101 Qualified and PPAP Capable

• S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements

BASE

MAXIMUM RATINGS

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Symbol

Value

Unit

Vdc

EMITTER

CEO

CBO

EBO

Vdc

6.0

Vdc

SOT−23 (TO−236)

CASE 318

STYLE 6

Collector Current − Continuous

Collector Current − Peak

600

900

mAdc

THERMAL CHARACTERISTICS

Characteristic

MARKING DIAGRAM

Symbol

Max

Unit

Total Device Dissipation FR−5 Board

(Note 1) @T = 25°C

225

1.8

mW/°C

2X M G

Derate above 25°C

Thermal Resistance, Junction−to−Ambient

556

°C/W

Total Device Dissipation Alumina

2X = Specific Device Code

Substrate (Note 2) @T = 25°C

300

2.4

mW/°C

Derate above 25°C

= Date Code*

= Pb−Free Package

(Note: Microdot may be in either location)

Thermal Resistance, Junction−to−Ambient

Junction and Storage Temperature

417

°C/W

°C

T , T

−55 to +150

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

stg

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*Transient pulses must not cause the junction temperature to be exceeded.

1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.

ORDERING INFORMATION

2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.

†

Device

Package

Shipping

MMBT4401LT1G

SMMBT4401LT1G

SOT−23

(Pb−Free)

3000 / Tape &

Reel

MMBT4401LT3G

SOT−23

(Pb−Free)

10,000 / Tape &

Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Publication Order Number:

October, 2011 − Rev. 10

MMBT4401LT1/D

12 3 4 5 6 7

中文翻译

下载PDF

与SMMBT4401L相关器件

型号	品牌	获取价格	描述	数据表
SMMBT4401LT1G	ONSEMI	获取价格	Switching Transistor NPN Silicon
SMMBT4403L	ONSEMI	获取价格	Switching Transistor
SMMBT4403LT1G	ONSEMI	获取价格	Switching Transistor
SMMBT5088LT1G	ONSEMI	获取价格	Low Noise Transistors
SMMBT5089LT1G	ONSEMI	获取价格	Low Noise Transistors
SMMBT5401LT1	ROCHESTER	获取价格	500mA, 150V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, CASE 318-08, TO-236, 3 PIN
SMMBT5401LT1G	ONSEMI	获取价格	高电压 PNP 双极晶体管
SMMBT5551LT1G	ONSEMI	获取价格	High Voltage Transistors
SMMBT5551LT3G	ONSEMI	获取价格	High Voltage Transistors
SMMBT6427LT1G	ONSEMI	获取价格	NPN 双极达林顿晶体管