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SMMBTA42LT1G PDF预览

SMMBTA42LT1G

更新时间: 2024-09-26 01:17:27
品牌 Logo 应用领域
安森美 - ONSEMI 光电二极管晶体管
页数 文件大小 规格书
5页 127K
描述
High Voltage Transistors

SMMBTA42LT1G 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:5 weeks风险等级:1.56
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:300 V
配置:SINGLE最小直流电流增益 (hFE):40
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.3 W参考标准:AEC-Q101
子类别:Other Transistors表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz

SMMBTA42LT1G 数据手册

 浏览型号SMMBTA42LT1G的Datasheet PDF文件第2页浏览型号SMMBTA42LT1G的Datasheet PDF文件第3页浏览型号SMMBTA42LT1G的Datasheet PDF文件第4页浏览型号SMMBTA42LT1G的Datasheet PDF文件第5页 
MMBTA42L, SMMBTA42L,  
MMBTA43L  
High Voltage Transistors  
NPN Silicon  
www.onsemi.com  
Features  
S Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements; AECQ101 Qualified and  
PPAP Capable  
COLLECTOR  
3
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
1
BASE  
2
EMITTER  
MAXIMUM RATINGS  
Characteristic  
Symbol  
Value  
Unit  
3
CollectorEmitter Voltage  
V
CEO  
V
CBO  
V
EBO  
Vdc  
MMBTA42, SMMBTA42  
MMBTA43  
300  
200  
1
2
CollectorBase Voltage  
Vdc  
Vdc  
MMBTA42, SMMBTA42  
MMBTA43  
300  
200  
SOT23 (TO236)  
CASE 318  
STYLE 6  
EmitterBase Voltage  
MMBTA42, SMMBTA42  
MMBTA43  
6.0  
6.0  
MARKING DIAGRAMS  
Collector Current Continuous  
I
C
500  
mAdc  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
1D M G  
M1E M G  
G
G
Total Device Dissipation FR5 Board  
P
D
(Note 1) T = 25°C  
225  
1.8  
mW  
mW/°C  
1
1
A
Derate above 25°C  
Thermal Resistance, JunctiontoAmbient  
R
556  
°C/W  
q
JA  
1D = MMBTA42LT, SMMBTA42L  
M1E = MMBTA43LT  
Total Device Dissipation Alumina  
P
D
M
= Date Code*  
Substrate (Note 2) T = 25°C  
300  
2.4  
mW  
mW/°C  
A
G
= PbFree Package  
(Note: Microdot may be in either location)  
Derate above 25°C  
Thermal Resistance, JunctiontoAmbient  
Junction and Storage Temperature  
R
417  
°C/W  
°C  
q
JA  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
T , T  
J
55 to +150  
stg  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. FR5 = 1.0 x 0.75 x 0.062 in.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.  
dimensions section on page 4 of this data sheet.  
© Semiconductor Components Industries, LLC, 1994  
1
Publication Order Number:  
October, 2016 Rev. 13  
MMBTA42LT1/D  
 

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