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SMMBT3904DW1TG PDF预览

SMMBT3904DW1TG

更新时间： 2024-02-27 03:44:01
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 188K
描述
TRANSISTOR SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

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中文翻译

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SMMBT3904DW1TG 技术参数

是否Rohs认证： 符合生命周期：Obsolete
Reach Compliance Code：compliant风险等级：5.82
峰值回流温度（摄氏度）：NOT SPECIFIED处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

SMMBT3904DW1TG 数据手册

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MBT3904DW1T1G,  
MBT3904DW2T1G,  
SMMBT3904DW1TG  
Dual General Purpose  
Transistors  
http://onsemi.com  
The MBT3904DW1T1G and MBT3904DW2T1G devices are a  
spin−off of our popular SOT−23/SOT−323 three−leaded device. It is  
designed for general purpose amplifier applications and is housed in  
the SOT−363 six−leaded surface mount package. By putting two  
discrete devices in one package, this device is ideal for low−power  
surface mount applications where board space is at a premium.  
MARKING  
DIAGRAM  
6
SOT−363/SC−88/  
SC70−6  
XX MG  
6
G
CASE 419B  
Features  
1
1
• h , 100−300  
FE  
XX=MA for MBT3904DW1T1G  
MJ for MBT3904DW2T1G  
M =Date Code  
• Low V  
, ≤ 0.4 V  
CE(sat)  
• Simplifies Circuit Design  
G
= Pb−Free Package  
• Reduces Board Space  
(Note: Microdot may be in either location)  
• Reduces Component Count  
• Available in 8 mm, 7−inch/3,000 Unit Tape and Reel  
• AEC−Q101 Qualified and PPAP Capable  
(3)  
(2)  
(1)  
Q
• S Prefix for Automotive and Other Applications Requiring Unique  
Q
1
2
Site and Control Change Requirements  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
(4)  
(5)  
(6)  
MBT3904DW1T1  
STYLE 1  
MAXIMUM RATINGS  
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Symbol  
Value  
40  
Unit  
Vdc  
(3)  
(2)  
(1)  
V
CEO  
V
CBO  
V
EBO  
60  
Vdc  
Q
2
Q
1
6.0  
Vdc  
Collector Current − Continuous  
Electrostatic Discharge  
I
200  
mAdc  
C
(4)  
(5)  
(6)  
ESD  
HBM Class 2  
MM Class B  
MBT3904DW2T1  
STYLE 27  
Stresses exceeding Maximum Ratings may damage the device. Maximum Rat-  
ings are stress ratings only. Functional operation above the Recommended Op-  
erating Conditions is not implied. Extended exposure to stresses above the Re-  
commended Operating Conditions may affect device reliability.  
ORDERING INFORMATION  
†
Device  
Shipping  
Package  
THERMAL CHARACTERISTICS  
MBT3904DW1T1G  
3000 /  
Tape & Reel  
SOT−363  
(Pb−Free)  
Characteristic  
Symbol  
Max  
Unit  
Total Package Dissipation (Note 1)  
P
150  
mW  
D
SMMBT3904DW1TG SOT−363  
(Pb−Free)  
3000 /  
Tape & Reel  
T
A
= 25°C  
Thermal Resistance,  
Junction−to−Ambient  
R
833  
°C/W  
°C  
q
JA  
MBT3904DW2T1G  
3000 /  
Tape & Reel  
SOT−363  
(Pb−Free)  
Junction and Storage  
Temperature Range  
T , T  
J
−55 to +150  
stg  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum  
recommended footprint.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
November, 2011 − Rev. 8  
MBT3904DW1T1/D  
 
12345678

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