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SMG2301 PDF预览

SMG2301

更新时间: 2024-02-15 10:24:17
品牌 Logo 应用领域
SECOS /
页数 文件大小 规格书
4页 357K
描述
P-Channel Enhancement Mode Power Mos.FET

SMG2301 技术参数

生命周期:ObsoleteReach Compliance Code:compliant
风险等级:5.76Base Number Matches:1

SMG2301 数据手册

 浏览型号SMG2301的Datasheet PDF文件第2页浏览型号SMG2301的Datasheet PDF文件第3页浏览型号SMG2301的Datasheet PDF文件第4页 
SMG2301  
-2.6A, -20V,RDS(ON) 130m  
Ω
Elektronische Bauelemente  
P-Channel Enhancement Mode Power Mos.FET  
RoHS Compliant Product  
A suffix of "-C" specifies halogen & RoHS compliant  
SC-59  
Min  
A
L
Dim  
A
Max  
3.10  
1.60  
1.30  
0.50  
2.10  
0.10  
0.26  
0.60  
1.15  
2.80  
Description  
2.70  
1.40  
1.00  
0.35  
1.70  
0.00  
0.10  
0.20  
0.85  
2.40  
3
B
The SMG2301 is universally preferred for all commercial  
industrial surface mount application and suited for low  
voltage applications such as DC/DC converters.  
S
B
Top View  
2
1
C
D
D
G
H
G
J
Features  
J
C
K
K
* Super high dense cell design for extremely low RDS(ON)  
* Reliable and rugged  
H
L
Drain  
S
Gate  
All Dimension in mm  
Applications  
D
Source  
* Power Management in Notebook Computer  
* Protable Equipment  
* Battery Powered System  
G
Marking : 2301  
S
Absolute Maximum Ratings  
Parameter  
Drain-Source Voltage  
Symbol  
VDS  
Ratings  
Unit  
V
-20  
±12  
-2.6  
-2.1  
-10  
Gate-Source Voltage  
VGS  
V
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current  
ID@TA=25o  
C
A
ID@TA=70 o  
IDM  
C
A
A
Total Power Dissipation  
PD@TA=25o  
C
1.38  
0.01  
W
W/oC  
oC  
Linear Derating Factor  
-55~+150  
Tj, Tstg  
Operating Junction and Storage Temperature Range  
Thermal Data  
Parameter  
Symbol  
Ratings  
Unit  
o
Thermal Resistance Junction-ambient3  
C /W  
Rthj-a  
90  
http://www.SeCoSGmbH.com/  
Any changing of specification will not be informed individual  
01-Jun-2002 Rev. A  
Page 1 of 4  

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