Datasheet > SMG2301B

SMG2301B

更新时间： 2024-01-23 15:09:51

品牌	Logo	应用领域
威伦 - WILLAS		/
页数	文件大小	规格书
6页	1293K
描述
20V P-Channel Enhancement-Mode MOSFET

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数据手册

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SMG2301B 数据手册

SMG2301B

20V P-Channel Enhancement-Mode MOSFET

FEATURES

● RDS(ON) ≦110mΩ@VGS=-4.5V

● RDS(ON) ≦150mΩ@VGS=-2.5V

● Super high density cell design for extremely low RDS(ON)

APPLICATIONS

● Power Management in Note book

● Portable Equipment

● Battery Powered System

● Load Switch

SOT– 23

● DSC

Ordering Information

Device

Shipping

Marking

3000/Tape& Reel

SMG2301B

01B

Parameter

Symbol

V^DSS

Limit

-20

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

(Tj=150℃)*

V^GSS

±8

T^A=25℃

T^A=70℃

-2.0

I^D

-1.6

Pulsed Drain Current

I^DM

P^D

-10

T^A=25℃

T^A=70℃

0.7

Maximum Power Dissipation

0.45

Operating Junction Temperature

Storage Temperature Range

T^J

-55 to 150

℃

Tstg

Typical

Maximum

175

Thermal Resistance-Junction to Ambient*

RθJA

℃/W

100

2014-05

WILLAS ELECTRONIC CORP.

12 3 4 5 6

中文翻译

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与SMG2301B相关器件

型号	品牌	获取价格	描述	数据表
SMG2301P	SECOS	获取价格	P-Channel Enhancement MOSFET
SMG2302	SECOS	获取价格	N-Channel Enhancement Mode Power Mos.FET
SMG2302B	WILLAS	获取价格	20V N-Channel Enhancement-Mode MOSFET
SMG2302N	SECOS	获取价格	N-Channel Enhancement Mode MOSFET
SMG2303	SECOS	获取价格	P-Channel Enhancement Mode Power Mos.FET
SMG2304	SECOS	获取价格	N-Channel Enhancement Mode Power Mos.FET
SMG2304A	SECOS	获取价格	N-Channel Enhancement Mode Power Mos.FET
SMG2305	SECOS	获取价格	P-Channel Enhancement Mode Power Mos.FET
SMG2305A	SECOS	获取价格	P-Channel Enhancement Mode Power Mos.FET
SMG2305P	SECOS	获取价格	P-Channel Enhancement MOSFET