Datasheet > SMG2300

SMG2300

更新时间： 2024-09-29 09:19:07

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	468K
描述
N-Channel Enhancement Mode Power Mos.FET

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中文翻译

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技术参数
数据手册

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SMG2300 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.58	Base Number Matches：	1

SMG2300 数据手册

SMG2300

6A, 20V,RDS(ON) 28m

Elektronische Bauelemente

N-Channel Enhancement Mode Power Mos.FET

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

SC-59

Min

Dim

Max

3.10

1.60

1.30

0.50

2.10

0.10

0.26

0.60

1.15

2.80

Description

2.70

1.40

1.00

0.35

1.70

0.00

0.10

0.20

0.85

2.40

Top View

The SMG2300 provide the designer with best combination

of fast switching, low on-resistance and cost-effectiveness.

The SMG2300 is universally used for all

commercial-industrial surface mount applications.

Features

Drain

* Low on-resistance

Gate

* Capable of 2.5V gate drive

All Dimension in mm

Source

Small package outline

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Symbol

V_DS

Ratings

Unit

Gate-Source Voltage

V_GS

±8

Continuous Drain Current³

Pulsed Drain Current^1,2

Power Dissipation

I_D@TA=25к

I_D@TA=70к

I_DM

4.8

P_D@TA=25к

1.25

0.01

Linear Derating Factor

Operating Junction and Storage Temperature Range

W/к

Tj, Tstg

-55 ~ +150

Thermal Data

Parameter

Symbol

Rthj-a

Value

100

Unit

к/W

Thermal Resistance Junction-ambient³Max.

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 4

12 3 4

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SMG2302N	SECOS	获取价格	N-Channel Enhancement Mode MOSFET
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SMG2304	SECOS	获取价格	N-Channel Enhancement Mode Power Mos.FET
SMG2304A	SECOS	获取价格	N-Channel Enhancement Mode Power Mos.FET
SMG2305	SECOS	获取价格	P-Channel Enhancement Mode Power Mos.FET