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SKCD 61 C 065 I4F PDF预览

SKCD 61 C 065 I4F

更新时间: 2024-11-15 14:50:55
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SKCD 61 C 065 I4F 数据手册

 浏览型号SKCD 61 C 065 I4F的Datasheet PDF文件第2页 
SKCD 61 C 065 I4F  
Absolute Maximum Ratings  
Symbol Conditions  
Values  
Unit  
Tj = 25 °C, IR = 0.12 mA  
VRRM  
IFSM  
650  
1200  
1100  
6050  
175  
V
A
A
A²s  
°C  
Tj = 25 °C  
Tj = 150 °C  
10 ms  
sin 180°  
Tj = 150 °C, tp = 10 ms, sin 180°  
i²t  
Tjmax  
Electrical Characteristics  
Symbol Conditions  
CAL-DIODE  
min.  
typ.  
max.  
Unit  
IF = 150 A 1)  
Tc = 80 °C, Tj = 175 °C, Fi=PI/2,  
IF(AV)  
IR  
103  
A
Semitrans Assembly; Rth(j-c) = 0.54 K/W  
Tj = 25 °C, VRRM = 650 V  
Tj = 150 °C, VRRM = 650 V  
Tj = 25 °C, IF = 109 A  
Tj = 150 °C, IF = 109 A  
Tj = 175 °C, IF = 109 A  
Tj = 150 °C  
VRRM = 650 V  
0.12  
34.00  
1.62  
1.56  
1.49  
0.99  
5.23  
0.95  
4.95  
mA  
mA  
V
V
V
V
m  
V
Size: 7,8 x 7,8 mm²  
VF  
1.30  
1.24  
1.18  
0.85  
3.59  
0.78  
3.65  
SKCD 61 C 065 I4F  
V(TO)  
rT  
V(TO)  
rT  
Features  
Tj = 150 °C  
Tj = 175 °C  
Tj = 175 °C  
ꢀ low forward voltage drop combined  
with a low temperature dependence  
ꢀ easy paralleling due to a small forward  
voltage spread  
m  
ꢀ very soft recovery behavior  
ꢀ small switching losses  
ꢀ high ruggedness  
Dynamic Characteristics  
Symbol Conditions  
min.  
typ.  
max.  
Unit  
Typical Applications*  
Tj = 25 °C, 150 A, 400 V, 2250 A/µs  
Err  
Err  
Qrr  
Qrr  
Irrm  
Irrm  
1.3  
3.8  
6
15.2  
95  
mJ  
mJ  
µC  
µC  
A
ꢀ freewheeling diode for IGBT  
Tj = 150 °C, 150 A, 400 V, 2250 A/µs  
Tj = 25 °C, 150 A, 400 V, 2250 A/µs  
Tj = 150 °C, 150 A, 400, 2250 A/µs  
Tj = 25 °C, 150 A, 400 V, 2250 A/µs  
Tj = 150 °C, 150 A, 400, 2250 A/µs  
Footnotes  
1) Nominal IGBT IF rating,  
verified by design and characterization  
139  
A
Thermal Characteristics  
Symbol Conditions  
min.  
typ.  
max.  
Unit  
Tj  
Tstg  
Tsolder  
Tsolder  
-40  
-40  
175  
175  
250  
320  
°C  
°C  
°C  
°C  
10 min.  
5 min.  
Mechanical Characteristics  
Symbol Conditions  
Values  
Unit  
Raster  
size  
Area total  
7,8 x 7,8  
mm2  
mm²  
60,84  
Anode  
Metallization  
Metallization  
bondable (Al)  
Cathode  
Wire bond  
Package  
solderable (Ag/Ni)  
Al, typ. diameter = 300 µm  
150 mm wafer frame  
Chips /  
Package  
234  
pcs  
SKCD  
© by SEMIKRON  
Rev. 0 – 12.06.2012  
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