SKCD 81 C 170 I4F
Absolute Maximum Ratings
Symbol Conditions
Values
Unit
Tj = 25 °C, IR = 0.11 mA
VRRM
IFSM
1700
950
860
V
A
A
Tj = 25 °C
Tj = 150 °C
10 ms
sin 180°
Tj = 150 °C, tp = 10 ms, sin 180°
i²t
Tjmax
3698
175
A²s
°C
Electrical Characteristics
Symbol Conditions
CAL-DIODE
min.
typ.
max.
Unit
IF = 150 A 1)
Tc = 80 °C, Tj = 175 °C, Fi=PI/2,
IF(AV)
IR
107
A
Semitrans Assembly; Rth(j-c) = 0.32 K/W
Tj = 25 °C, VRRM = 1700 V
Tj = 150 °C, VRRM = 1700 V
Tj = 25 °C, IF = 89 A
Tj = 150 °C, IF = 89 A
Tj = 175 °C, IF = 89 A
Tj = 150 °C
VRRM = 1700 V
Size: 9 x 9 mm²
0.11
40.00
2.04
1.99
1.92
1.22
8.65
1.19
8.20
mA
mA
V
V
V
V
m
V
VF
1.71
1.69
1.61
1.08
6.85
1.01
6.74
SKCD 81 C 170 I4F
V(TO)
rT
V(TO)
rT
Features
Tj = 150 °C
Tj = 175 °C
Tj = 175 °C
ꢀ max. junction temperature 175 °C
ꢀ low forward voltage drop
ꢀ soft reverse recovery behavior
ꢀ low switching losses
m
Dynamic Characteristics
Symbol Conditions
Typical Applications*
ꢀ freewheeling diode for IGBT
min.
typ.
max.
Unit
Footnotes
Tj = 25 °C, 150 A, 1200 V, 3000 A/µs
Err
Err
Qrr
Qrr
Irrm
Irrm
15
31.5
24
45
143
180
mJ
mJ
µC
µC
A
1) Nominal IGBT IF rating,
Tj = 150 °C, 150 A, 1200 V, 3000 A/µs
Tj = 25 °C, 150 A, 1200 V, 3000 A/µs
Tj = 150 °C, 150 A, 1200 V, 3000 A/µs
Tj = 25 °C, 150 A, 1200 V, 3000 A/µs
Tj = 150 °C, 150 A, 1200 V, 3000 A/µs
verified by design and characterization
A
Thermal Characteristics
Symbol Conditions
min.
typ.
max.
Unit
Tj
Tstg
Tsolder
Tsolder
-40
-40
175
175
250
320
°C
°C
°C
°C
10 min.
5 min.
Mechanical Characteristics
Symbol Conditions
Values
Unit
Raster
size
Area total
9 x 9
mm2
mm²
81
Anode
Metallization
Metallization
bondable (Al)
Cathode
Wire bond
Package
solderable (Ag/Ni)
Al, typ. diameter = 300 µm
150 mm wafer frame
Chips /
Package
179
pcs
SKCD
© by SEMIKRON
Rev. 0 – 27.02.2013
1