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SKCD 81 C 120 I3 PDF预览

SKCD 81 C 120 I3

更新时间: 2023-12-06 20:11:17
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赛米控丹佛斯 - SEMIKRON /
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Chips

SKCD 81 C 120 I3 数据手册

 浏览型号SKCD 81 C 120 I3的Datasheet PDF文件第2页 
SKCD 81 C 120 I3  
Absolute Maximum Ratings  
Symbol Conditions  
Values  
Unit  
Tj = 25 °C, IR = 0.3 mA  
VRRM  
IFSM  
1200  
1150  
1100  
6050  
150  
V
A
A
A²s  
°C  
Tj = 25 °C  
Tj = 150 °C  
10 ms  
sin 180°  
Tj = 150 °C, tp = 10 ms, sin 180°  
i²t  
Tjmax  
Electrical Characteristics  
Symbol Conditions  
CAL-DIODE  
min.  
typ.  
max.  
Unit  
IF(DC) = 100 A  
VRRM = 1200 V  
Size: 9 x 9 mm²  
Tc = 80 °C, Tj = 150 °C, Fi=PI/2,  
IF(AV)  
IR  
80  
A
Semitrans Assembly; Rth(j-c) = 0.4 K/W  
Tj = 25 °C, VRRM = 1200 V  
Tj = 125 °C, VRRM = 1200 V  
Tj = 25 °C, IF = 100 A  
Tj = 125 °C, IF = 100 A  
Tj = 125 °C  
0.25  
8.00  
2.50  
2.30  
mA  
mA  
V
V
V
VF  
2.00  
1.79  
1.18  
5.9  
SKCD 81 C 120 I3  
V(TO)  
rT  
Tj = 125 °C  
m  
Features  
ꢀ low forward voltage drop combined  
with a low temperature dependence  
ꢀ easy paralleling due to a small forward  
voltage spread  
Dynamic Characteristics  
Symbol Conditions  
min.  
typ.  
max.  
Unit  
ꢀ very soft recovery behavior  
ꢀ small switching losses  
Tj = 25 °C, 100 A, 600 V, 2000 A/µs  
Err  
Err  
Qrr  
Qrr  
Irrm  
Irrm  
2.24  
5.5  
6.9  
16.5  
63  
mJ  
mJ  
µC  
µC  
A
Tj = 125 °C, 100 A, 600 V, 2000 A/µs  
Tj = 25 °C, 100 A, 600 V, 2000 A/µs  
Tj = 125 °C, 100 A, 600, 2000 A/µs  
Tj = 25 °C, 100 A, 600 V, 2000 A/µs  
Tj = 125 °C, 100 A, 600, 2000 A/µs  
ꢀ high ruggedness  
ꢀ compatible to thick wire bonding  
ꢀ compatible to all standard solder  
processes  
82  
A
Typical Applications*  
ꢀ freewheeling diode for IGBT  
ꢀ particularly suitable for frequencies > 8  
kHz  
Thermal Characteristics  
Symbol Conditions  
min.  
typ.  
max.  
Unit  
Tj  
Tstg  
Tsolder  
Tsolder  
-40  
-40  
150  
150  
250  
320  
°C  
°C  
°C  
°C  
10 min.  
5 min.  
Mechanical Characteristics  
Symbol Conditions  
Values  
Unit  
Raster  
size  
Area total  
Anode  
9 x 9  
mm2  
mm²  
81  
bondable (Al)  
Cathode  
Wire bond  
Package  
solderable (Ag/Ni)  
Al, diameter 500 µm  
150 mm wafer frame  
Chips /  
Package  
179  
pcs  
SKCD  
© by SEMIKRON  
Rev. 0 – 06.02.2013  
1

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