SKCD 81 C 120 I3
Absolute Maximum Ratings
Symbol Conditions
Values
Unit
Tj = 25 °C, IR = 0.3 mA
VRRM
IFSM
1200
1150
1100
6050
150
V
A
A
A²s
°C
Tj = 25 °C
Tj = 150 °C
10 ms
sin 180°
Tj = 150 °C, tp = 10 ms, sin 180°
i²t
Tjmax
Electrical Characteristics
Symbol Conditions
CAL-DIODE
min.
typ.
max.
Unit
IF(DC) = 100 A
VRRM = 1200 V
Size: 9 x 9 mm²
Tc = 80 °C, Tj = 150 °C, Fi=PI/2,
IF(AV)
IR
80
A
Semitrans Assembly; Rth(j-c) = 0.4 K/W
Tj = 25 °C, VRRM = 1200 V
Tj = 125 °C, VRRM = 1200 V
Tj = 25 °C, IF = 100 A
Tj = 125 °C, IF = 100 A
Tj = 125 °C
0.25
8.00
2.50
2.30
mA
mA
V
V
V
VF
2.00
1.79
1.18
5.9
SKCD 81 C 120 I3
V(TO)
rT
Tj = 125 °C
m
Features
ꢀ low forward voltage drop combined
with a low temperature dependence
ꢀ easy paralleling due to a small forward
voltage spread
Dynamic Characteristics
Symbol Conditions
min.
typ.
max.
Unit
ꢀ very soft recovery behavior
ꢀ small switching losses
Tj = 25 °C, 100 A, 600 V, 2000 A/µs
Err
Err
Qrr
Qrr
Irrm
Irrm
2.24
5.5
6.9
16.5
63
mJ
mJ
µC
µC
A
Tj = 125 °C, 100 A, 600 V, 2000 A/µs
Tj = 25 °C, 100 A, 600 V, 2000 A/µs
Tj = 125 °C, 100 A, 600, 2000 A/µs
Tj = 25 °C, 100 A, 600 V, 2000 A/µs
Tj = 125 °C, 100 A, 600, 2000 A/µs
ꢀ high ruggedness
ꢀ compatible to thick wire bonding
ꢀ compatible to all standard solder
processes
82
A
Typical Applications*
ꢀ freewheeling diode for IGBT
ꢀ particularly suitable for frequencies > 8
kHz
Thermal Characteristics
Symbol Conditions
min.
typ.
max.
Unit
Tj
Tstg
Tsolder
Tsolder
-40
-40
150
150
250
320
°C
°C
°C
°C
10 min.
5 min.
Mechanical Characteristics
Symbol Conditions
Values
Unit
Raster
size
Area total
Anode
9 x 9
mm2
mm²
81
bondable (Al)
Cathode
Wire bond
Package
solderable (Ag/Ni)
Al, diameter ≤ 500 µm
150 mm wafer frame
Chips /
Package
179
pcs
SKCD
© by SEMIKRON
Rev. 0 – 06.02.2013
1