Datasheet > SKCD 61 C 170 I HD

SKCD 61 C 170 I HD

更新时间： 2024-11-15 14:54:11

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		/
页数	文件大小	规格书
2页	96K
描述
Chips

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SKCD 61 C 170 I HD 数据手册

SKCD 61 C 170 I HD

Absolute Maximum Ratings

Symbol Conditions

Values

Unit

T_j= 25 °C, I_R= 0.09 mA

V_RRM

I_FSM

1700

850

710

T_j= 25 °C

T_j= 150 °C

10 ms

sin 180°

T_j= 150 °C, t_p= 10 ms, sin 180°

i²t

T_jmax

2521

150

A²s

°C

Electrical Characteristics

Symbol Conditions

CAL-DIODE

min.

typ.

max.

Unit

I_F= 100 A ¹⁾

T_c= 80 °C, T_j= 150 °C, F_i=PI/2,

_th(j-c)= 0.54 K/W,

I_F(AV)

I_R

V_RRM= 1700 V

Size: 7.8 x 7.8 mm²

Semitrans Assembly

T_j= 25 °C, V_RRM= 1700 V

T_j= 125 °C, V_RRM= 1700 V

T_j= 25 °C, I_F= 100 A

T_j= 125 °C, I_F= 100 A

T_j= 125 °C

0.09

5.50

2.02

2.05

V_F

1.73

1.78

1.03

7.4

SKCD 61 C 170 I HD

V_(TO)

r_T

Features

ꢀ high current density

ꢀ easy paralleling due to a small forward

voltage spread

ꢀ positive temperature coefficient

ꢀ very soft recovery behavior

ꢀ small switching losses

ꢀ high ruggedness

ꢀ compatible to thick wire bonding

ꢀ compatible to standard solder

processes

T_j= 125 °C

m

Dynamic Characteristics

Symbol Conditions

min.

typ.

max.

Unit

T_j= 25 °C, 100 A, 1200 V, 2000 A/µs

E_rr

Q_rr

I_rrm

22.5

75.5

µC

T_j= 125 °C, 100 A, 1200 V, 2000 A/µs

T_j= 25 °C, 100 A, 1200 V, 2000 A/µs

T_j= 125 °C, 100 A, 1200 V, 2000 A/µs

T_j= 25 °C, 100 A, 1200 V, 2000 A/µs

T_j= 125 °C, 100 A, 1200 V, 2000 A/µs

Typical Applications*

ꢀ freewheeling diode for IGBT

ꢀ particularly suitable for frequencies < 8

kHz

Thermal Characteristics

Symbol Conditions

min.

typ.

max.

Unit

Footnotes

¹⁾Nominal IGBT I_Crating,

T_j

T_stg

T_solder

-40

150

250

320

°C

verified by design and characterization

10 min.

5 min.

Mechanical Characteristics

Symbol Conditions

Values

Unit

Raster

size

Area total

Anode

7.8 x 7.8

mm²

bondable (Al)

Cathode

Wire bond

Package

solderable (Ag/Ni)

Al, diameter ≤ 500 µm

150 mm wafer on frame

Chips /

Package

234

pcs

SKCD

Rev. 0 – 23.07.2013

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