SKCD 04 C 060 I HD
Absolute Maximum Ratings
Symbol Conditions
Values
Unit
Tj = 25 °C, IR = 0.1 mA
Ts = 80 °C, Tj = 175 °C
VRRM
IF(AV)
IFSM
600
11
V
A
Tj = 25 °C
Tj = 150 °C
75
A
10 ms
sin 180°
65
A
Tjmax
175
°C
Electrical Characteristics
Symbol Conditions
CAL-DIODE
min.
typ.
max.
Unit
IF = 10 A
i2t
IR
21
A2s
mA
mA
V
Tj = 150 °C, 10 ms, sin 180°
Tj = 25 °C, VRRM = 600 V
0.10
VRRM = 600 V
Size: 2 mm x 2 mm
Tj = 150 °C, VRRM = 600 V
Tj = 25 °C, IF = 7 A
Tj = 150 °C, IF = 7 A
Tj = 150 °C
VF
1.35
1.31
0.85
66.7
V
V(TO)
rT
V
SKCD 04 C 060 I HD
Tj = 150 °C
mΩ
Dynamic Characteristics
Symbol Conditions
Features
• high current density
min.
typ.
max.
Unit
• easy paralleling due to a small forward
voltage spread
• positive temperature coefficient
• very soft recovery behavior
• small switching losses
• high ruggedness
• compatible to thick wire bonding
• compatible to standard solder
processes
Tj = 25 °C, 6 A, 300 V, 520 A/µs
trr
µs
ns
µC
µC
A
Tj = 150 °C, 6 A, 300 V, 520 A/µs
Tj = 25 °C, 6 A, 300 V, 520 A/µs
Tj = 150 °C, 6 A, 300 V, 520 A/µs
Tj = 25 °C, 6 A, 300 V, 520 A/µs
Tj = 150 °C, 6 A, 300 V, 520 A/µs
trr
Qrr
Qrr
Irrm
Irrm
0.89
11.2
A
Thermal Characteristics
Symbol Conditions
Typical Applications*
• freewheeling diode for IGBT
min.
typ.
max.
Unit
Tj
-40
-40
175
175
250
320
°C
°C
°C
°C
Tstg
Tsolder
Tsolder
10 min.
5 min.
sold. on 0,38 mm DCB, reference point
on copper heatsink close to the chip
Rth(j-s)
3
K/W
Mechanical Characteristics
Symbol Conditions
Values
Unit
Raster
size
2 x 2
mm2
mm2
Area total
Anode
4
bondable (Al)
Cathode
Wire bond
Package
solderable (Ag/Ni)
Al, diameter ≤ 500 µm
wafer frame
Chips /
Package
2661 (5" Wafer)
pcs
SKCD
© by SEMIKRON
Rev. 0 – 18.02.2010
1