SKCD 121 C 120 I3
Absolute Maximum Ratings
Symbol Conditions
Values
Unit
Tj = 25 °C, IR = 0.5 mA
Ts = 80 °C, Tj = 150 °C
VRRM
IF(AV)
IFSM
1200
120
V
A
Tj = 25 °C
Tj = 150 °C
1660
A
10 ms
sin 180°
A
Tjmax
150
°C
Electrical Characteristics
Symbol Conditions
CAL-DIODE
min.
typ.
max.
Unit
IF = 150 A
i2t
IR
A2s
mA
mA
V
Tj = 150 °C, 10 ms, sin 180°
Tj = 25 °C, VRRM = 1200 V
0.50
10.00
2.50
VRRM = 1200 V
Size: 11 mm x 11 mm
Tj = 125 °C, VRRM = 1200 V
Tj = 25 °C, IF = 155 A
Tj = 125 °C, IF = 155 A
Tj = 125 °C
VF
2.00
1.79
1.18
3.8
2.30
V
V(TO)
rT
V
SKCD 121 C 120 I3
Tj = 125 °C
mΩ
Dynamic Characteristics
Symbol Conditions
Features
• low forward voltage drop combined
with a low temperature dependence
• easy paralleling due to a small forward
voltage spread
• very soft recovery behavior
• small switching losses
min.
typ.
max.
Unit
Tj = 25 °C, , 600 V,
Tj = 125 °C, , 600 V,
Tj = 25 °C, , 600 V,
Tj = 125 °C, , 600 V,
Tj = 25 °C, , 600 V,
Tj = 125 °C, , 600 V,
trr
µs
ns
µC
µC
A
trr
Qrr
Qrr
Irrm
Irrm
• high ruggedness
• compatible to thick wire bonding
• compatible to all standard solder
processes
A
Typical Applications*
Thermal Characteristics
Symbol Conditions
• freewheeling diode for IGBT
• particularly suitable for frequencies > 8
kHz
min.
typ.
max.
Unit
Tj
-40
-40
150
150
250
320
°C
°C
°C
°C
Tstg
Tsolder
Tsolder
10 min.
5 min.
sold. on 0,38 mm DCB, reference point
on copper heatsink close to the chip
Rth(j-s)
0.24
K/W
Mechanical Characteristics
Symbol Conditions
Values
Unit
Raster
size
11 x 11
mm2
mm2
Area total
Anode
121
bondable (Al)
Cathode
Wire bond
Package
solderable (Ag/Ni)
Al, diameter ≤ 500 µm
wafer frame
Chips /
Package
76 (5" Wafer)
pcs
SKCD
© by SEMIKRON
Rev. 0 – 18.02.2010
1