Datasheet > SKCD22C120I4F

SKCD22C120I4F

更新时间： 2024-11-14 09:24:31

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		二极管
页数	文件大小	规格书
2页	148K
描述
CAL-DIODE

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中文翻译

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数据手册

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SKCD22C120I4F 数据手册

SKCD 22 C 120 I4F

Absolute Maximum Ratings

Symbol Conditions

Values

Unit

T_j= 25 °C, I_R= 0.06 mA

T_c= 80 °C, T_j= 175 °C, F_i=PI/2

V_RRM

I_F(AV)

I_FSM

1200

170

175

°C

T_j= 25 °C

T_j= 150 °C

10 ms

sin 180°

T_jmax

Electrical Characteristics

Symbol Conditions

CAL-DIODE

min.

typ.

max.

Unit

I_F= 35 A

V_RRM= 1200 V

Size: 4,67 mm x 4,67 mm

T_j= 150 °C, sin 180°, 10 ms

T_j= 25 °C, V_RRM= 1200 V

i²t

I_R

145

0.06

5.50

2.62

2.46

1.10

43.40

0.98

42.40

A²s

m

T_j= 150 °C, V_RRM= 1200 V

T_j= 25 °C, I_F= 35 A

T_j= 150 °C, I_F= 35 A

T_j= 175 °C, I_F= 35 A

T_j= 150 °C

T_j= 175 °C

2.70

2.30

2.29

2.14

0.90

39.8

0.82

37.80

V_F

V_(TO)

r_T

V_(TO)

r_T

SKCD 22 C 120 I4F

Features

m

• max. junction 175 °C

Dynamic Characteristics

Symbol Conditions

• very low forward voltage drop

• positive temperature coefficient

• extreme soft recovery

min.

typ.

max.

Unit

T_j= 150 °C, 35 A, 600 V, 600 A/µs

t_rr

E_rr

I_rrm

0.59

1.6

22.8

µs

Typical Applications*

• freewheeling diode for IGBT

Thermal Characteristics

Symbol Conditions

typ.

max.

Unit

T_j

T_stg

T_solder

R_th(j-c)

-40

175

250

320

°C

K/W

10 min.

5 min.

Semitrans Assembly

1.48

Mechanical Characteristics

Symbol Conditions

Values

Unit

Raster

size

Area total

4.67 x 4.67

mm²

Anode

Metallization

bondable (Al)

Cathode

Wire bond

Package

solderable (Ag/Ni)

Al, typ. diameter = 300 µm

wafer frame

Chips /

Package

684

pcs

SKCD

Rev. 0 – 16.03.2011

中文翻译

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