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SKCD108C120I4FR PDF预览

SKCD108C120I4FR

更新时间: 2024-11-14 20:04:03
品牌 Logo 应用领域
赛米控丹佛斯 - SEMIKRON /
页数 文件大小 规格书
2页 141K
描述
Rectifier Diode,

SKCD108C120I4FR 技术参数

生命周期:ActiveReach Compliance Code:compliant
Base Number Matches:1

SKCD108C120I4FR 数据手册

 浏览型号SKCD108C120I4FR的Datasheet PDF文件第2页 
SKCD 108 C 120 I4F R  
Absolute Maximum Ratings  
Symbol Conditions  
Values  
Unit  
Tj = 25 °C, IR = 0.22 mA  
VRRM  
IFSM  
1200  
1180  
1120  
6272  
175  
V
A
A
A²s  
°C  
Tj = 25 °C  
Tj = 150 °C  
10 ms  
sin 180°  
Tj = 150 °C, tp = 10 ms, sin 180°  
i²t  
Tjmax  
Electrical Characteristics  
Symbol Conditions  
CAL-DIODE  
min.  
typ.  
max.  
Unit  
IF = 200 A 1)  
Tc = 80 °C, Tj = 175 °C, Fi=PI/2,  
th(j-c) = 0.24 K/W,  
R
IF(AV)  
IR  
131  
A
VRRM = 1200 V  
Size: 12.3 x 8.8 mm²  
Semitrans Assembly  
Tj = 25 °C, VRRM = 1200 V  
Tj = 150 °C, VRRM = 1200 V  
Tj = 25 °C, IF = 132 A  
Tj = 150 °C, IF = 132 A  
Tj = 175 °C, IF = 132 A  
Tj = 150 °C  
0.22  
40.00  
2.23  
2.19  
2.11  
1.13  
8.03  
1.02  
8.26  
mA  
mA  
V
V
V
V
mΩ  
V
VF  
1.91  
1.87  
1.79  
1.03  
6.36  
0.95  
6.36  
SKCD 108 C 120 I4F R  
Features  
• max. junction 175 °C  
• very low forward voltage drop  
• positive temperature coefficient  
• extreme soft recovery  
V(TO)  
rT  
V(TO)  
rT  
Tj = 150 °C  
Tj = 175 °C  
Tj = 175 °C  
mΩ  
Typical Applications*  
• freewheeling diode for IGBT  
Dynamic Characteristics  
Symbol Conditions  
min.  
typ.  
max.  
Unit  
Footnotes  
1) Nominal IGBT IF rating,  
Tj = 25 °C, 200 A, 600 V, 4000 A/µs  
Err  
Err  
Qrr  
Qrr  
Irrm  
Irrm  
4.8  
14  
14  
34  
165  
230  
mJ  
mJ  
µC  
µC  
A
verified by design and characterization  
Tj = 150 °C, 200 A, 600 V, 4000 A/µs  
Tj = 25 °C, 200 A, 600 V, 4000 A/µs  
Tj = 150 °C, 200 A, 600 V, 4000 A/µs  
Tj = 25 °C, 200 A, 600 V, 4000 A/µs  
Tj = 150 °C, 200 A, 600 V, 4000 A/µs  
A
Thermal Characteristics  
Symbol Conditions  
min.  
typ.  
max.  
Unit  
Tj  
Tstg  
Tsolder  
Tsolder  
-40  
-40  
175  
175  
250  
320  
°C  
°C  
°C  
°C  
10 min.  
5 min.  
Mechanical Characteristics  
Symbol Conditions  
Values  
Unit  
Raster  
size  
Area total  
12.3 x 8.8  
mm2  
mm²  
108.24  
Anode  
Cathode  
Wire bond  
Metallization  
Metallization  
bondable (Al)  
solderable (Ag/Ni)  
Al, typ. diameter = 300 µm  
Chips /  
Package  
150 mm wafer on frame  
126  
pcs  
SKCD  
© by SEMIKRON  
Rev. 1.0 – 26.06.2018  
1

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