SKCD 120 C 170 I4 F R
Absolute Maximum Ratings
Symbol Conditions
Values
Unit
Tj = 25 °C, IR = 0.15 mA
VRRM
IFSM
1700
1300
1200
7200
175
V
A
A
A²s
°C
Tj = 25 °C
Tj = 150 °C
10 ms
sin 180°
Tj = 150 °C, tp = 10 ms, sin 180°
i²t
Tjmax
Electrical Characteristics
Symbol Conditions
CAL-DIODE
min.
typ.
max.
Unit
IF = 200 A 1)
Tc = 80 °C, Tj = 175 °C, Fi=PI/2,
th(j-c) = 0.19 K/W,
R
IF(AV)
IR
175
A
VRRM = 1700 V
Size: 12 x 10 mm²
Semitrans Assembly
Tj = 25 °C, VRRM = 1700 V
Tj = 150 °C, VRRM = 1700 V
Tj = 25 °C, IF = 140 A
Tj = 150 °C, IF = 140 A
Tj = 175 °C, IF = 140 A
Tj = 150 °C
0.15
60.00
2.03
1.99
1.91
1.22
5.50
1.19
5.14
mA
mA
V
V
V
V
mΩ
V
VF
1.71
1.69
1.61
1.08
4.36
1.01
4.29
SKCD 120 C 170 I4 F R
Features
V(TO)
rT
V(TO)
rT
ꢀ max. junction temperature 175 °C
ꢀ low forward voltage drop
ꢀ soft reverse recovery behavior
ꢀ low switching losses
Tj = 150 °C
Tj = 175 °C
Tj = 175 °C
mΩ
Typical Applications*
ꢀ freewheeling diode for IGBT
Dynamic Characteristics
Symbol Conditions
min.
typ.
max.
Unit
Footnote
1) Nominal IGBT IF rating,
Tj = 25 °C, 200 A, 1200 V, 5000 A/µs
Err
Err
Qrr
Qrr
Irrm
Irrm
30
60
37
71
265
340
mJ
mJ
µC
µC
A
verified by design and characterization
Tj = 150 °C, 200 A, 1200 V, 5000 A/µs
Tj = 25 °C, 200 A, 1200 V, 5000 A/µs
Tj = 150 °C, 200 A, 1200 V, 5000 A/µs
Tj = 25 °C, 200 A, 1200 V, 5000 A/µs
Tj = 150 °C, 200 A, 1200 V, 5000 A/µs
A
Thermal Characteristics
Symbol Conditions
min.
typ.
max.
Unit
Tj
Tstg
Tsolder
Tsolder
-40
-40
175
175
250
320
°C
°C
°C
°C
10 min.
5 min.
Mechanical Characteristics
Symbol Conditions
Values
Unit
Raster
size
Area total
12 x 10
mm2
mm²
120
Anode
Cathode
Wire bond
Metallization
Metallization
bondable (Al)
solderable (Ag/Ni)
Al, typ. diameter = 300 µm
Chips /
Package
150 mm wafer on frame
114
pcs
SKCD
© by SEMIKRON
Rev. 0 – 26.02.2015
1