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SKCD120C170I4FR PDF预览

SKCD120C170I4FR

更新时间: 2024-11-14 21:19:27
品牌 Logo 应用领域
赛米控丹佛斯 - SEMIKRON /
页数 文件大小 规格书
2页 108K
描述
Rectifier Diode,

SKCD120C170I4FR 技术参数

生命周期:ActiveReach Compliance Code:compliant
Base Number Matches:1

SKCD120C170I4FR 数据手册

 浏览型号SKCD120C170I4FR的Datasheet PDF文件第2页 
SKCD 120 C 170 I4 F R  
Absolute Maximum Ratings  
Symbol Conditions  
Values  
Unit  
Tj = 25 °C, IR = 0.15 mA  
VRRM  
IFSM  
1700  
1300  
1200  
7200  
175  
V
A
A
A²s  
°C  
Tj = 25 °C  
Tj = 150 °C  
10 ms  
sin 180°  
Tj = 150 °C, tp = 10 ms, sin 180°  
i²t  
Tjmax  
Electrical Characteristics  
Symbol Conditions  
CAL-DIODE  
min.  
typ.  
max.  
Unit  
IF = 200 A 1)  
Tc = 80 °C, Tj = 175 °C, Fi=PI/2,  
th(j-c) = 0.19 K/W,  
R
IF(AV)  
IR  
175  
A
VRRM = 1700 V  
Size: 12 x 10 mm²  
Semitrans Assembly  
Tj = 25 °C, VRRM = 1700 V  
Tj = 150 °C, VRRM = 1700 V  
Tj = 25 °C, IF = 140 A  
Tj = 150 °C, IF = 140 A  
Tj = 175 °C, IF = 140 A  
Tj = 150 °C  
0.15  
60.00  
2.03  
1.99  
1.91  
1.22  
5.50  
1.19  
5.14  
mA  
mA  
V
V
V
V
m  
V
VF  
1.71  
1.69  
1.61  
1.08  
4.36  
1.01  
4.29  
SKCD 120 C 170 I4 F R  
Features  
V(TO)  
rT  
V(TO)  
rT  
ꢀ max. junction temperature 175 °C  
ꢀ low forward voltage drop  
ꢀ soft reverse recovery behavior  
ꢀ low switching losses  
Tj = 150 °C  
Tj = 175 °C  
Tj = 175 °C  
mΩ  
Typical Applications*  
ꢀ freewheeling diode for IGBT  
Dynamic Characteristics  
Symbol Conditions  
min.  
typ.  
max.  
Unit  
Footnote  
1) Nominal IGBT IF rating,  
Tj = 25 °C, 200 A, 1200 V, 5000 A/µs  
Err  
Err  
Qrr  
Qrr  
Irrm  
Irrm  
30  
60  
37  
71  
265  
340  
mJ  
mJ  
µC  
µC  
A
verified by design and characterization  
Tj = 150 °C, 200 A, 1200 V, 5000 A/µs  
Tj = 25 °C, 200 A, 1200 V, 5000 A/µs  
Tj = 150 °C, 200 A, 1200 V, 5000 A/µs  
Tj = 25 °C, 200 A, 1200 V, 5000 A/µs  
Tj = 150 °C, 200 A, 1200 V, 5000 A/µs  
A
Thermal Characteristics  
Symbol Conditions  
min.  
typ.  
max.  
Unit  
Tj  
Tstg  
Tsolder  
Tsolder  
-40  
-40  
175  
175  
250  
320  
°C  
°C  
°C  
°C  
10 min.  
5 min.  
Mechanical Characteristics  
Symbol Conditions  
Values  
Unit  
Raster  
size  
Area total  
12 x 10  
mm2  
mm²  
120  
Anode  
Cathode  
Wire bond  
Metallization  
Metallization  
bondable (Al)  
solderable (Ag/Ni)  
Al, typ. diameter = 300 µm  
Chips /  
Package  
150 mm wafer on frame  
114  
pcs  
SKCD  
© by SEMIKRON  
Rev. 0 – 26.02.2015  
1

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