Datasheet > SKCD 81 C 120 I4F

SKCD 81 C 120 I4F

更新时间： 2024-11-15 14:55:27

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		/
页数	文件大小	规格书
2页	164K
描述
Chips

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SKCD 81 C 120 I4F 数据手册

SKCD 81 C 120 I4F

Absolute Maximum Ratings

Symbol Conditions

Values

Unit

T_j= 25 °C, I_R= 0.18 mA

T_c= 80 °C, T_j= 175 °C, F_i=PI/2

V_RRM

I_F(AV)

I_FSM

1200

900

175

°C

T_j= 25 °C

T_j= 150 °C

10 ms

sin 180°

T_jmax

Electrical Characteristics

Symbol Conditions

CAL-DIODE

min.

typ.

max.

Unit

I_F= 150 A

V_RRM= 1200 V

Size: 9 mm x 9 mm

T_j= 150 °C, sin 180°, 10 ms

T_j= 25 °C, V_RRM= 1200 V

i²t

I_R

4050

0.18

28.00

2.46

2.38

2.24

1.10

8.60

0.98

8.40

A²s

m

T_j= 150 °C, V_RRM= 1200 V

T_j= 25 °C, I_F= 150 A

T_j= 150 °C, I_F= 150 A

T_j= 175 °C, I_F= 150 A

T_j= 150 °C

T_j= 175 °C

14.00

2.14

2.07

1.93

0.90

7.8

V_F

V_(TO)

r_T

V_(TO)

r_T

SKCD 81 C 120 I4F

Features

0.82

7.40

m

ꢀ max. junction 175 °C

Dynamic Characteristics

Symbol Conditions

ꢀ very low forward voltage drop

ꢀ positive temperature coefficient

ꢀ extreme soft recovery

min.

typ.

max.

Unit

T_j= 150 °C, 150 A, 600 V, 3200 A/µs

t_rr

E_rr

I_rrm

0.48

8.7

153

µs

Typical Applications*

ꢀ freewheeling diode for IGBT

Thermal Characteristics

Symbol Conditions

typ.

max.

Unit

T_j

T_stg

T_solder

R_th(j-c)

-40

175

250

320

°C

K/W

10 min.

5 min.

Semitrans Assembly

0.32

Mechanical Characteristics

Symbol Conditions

Values

Unit

Raster

size

Area total

9 x 9

mm²

Anode

Metallization

bondable (Al)

Cathode

Wire bond

Package

solderable (Ag/Ni)

Al, typ. diameter = 300 µm

wafer frame

Chips /

Package

179

pcs

SKCD

Rev. 0 – 16.03.2011

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