SKCD 81 C 065 I4F
Absolute Maximum Ratings
Symbol Conditions
Values
Unit
Tj = 25 °C, IR = 0.15 mA
VRRM
IFSM
650
1470
1290
8321
175
V
A
A
A²s
°C
Tj = 25 °C
Tj = 150 °C
10 ms
sin 180°
Tj = 150 °C, tp = 10 ms, sin 180°
i²t
Tjmax
Electrical Characteristics
Symbol Conditions
CAL-DIODE
min.
typ.
max.
Unit
IF = 200 A 1)
Tc = 80 °C, Tj = 175 °C, Fi=PI/2,
IF(AV)
IR
139
A
Semitrans Assembly; Rth(j-c) = 0.4 K/W
Tj = 25 °C, VRRM = 650 V
Tj = 150 °C, VRRM = 650 V
Tj = 25 °C, IF = 148 A
Tj = 150 °C, IF = 148 A
Tj = 175 °C, IF = 148 A
Tj = 150 °C
VRRM = 650 V
Size: 9 x 9 mm²
0.15
44.00
1.62
1.56
1.49
0.99
3.85
0.95
3.65
mA
mA
V
V
V
V
m
V
VF
1.30
1.24
1.18
0.85
2.64
0.78
2.68
SKCD 81 C 065 I4F
V(TO)
rT
V(TO)
rT
Features
Tj = 150 °C
Tj = 175 °C
Tj = 175 °C
ꢀ low forward voltage drop combined
with a low temperature dependence
ꢀ easy paralleling due to a small forward
voltage spread
m
ꢀ very soft recovery behavior
ꢀ small switching losses
ꢀ high ruggedness
Dynamic Characteristics
Symbol Conditions
min.
typ.
max.
Unit
Typical Applications*
Tj = 25 °C, 200 A, 400 V, 3000 A/µs
Err
Err
Qrr
Qrr
Irrm
Irrm
2.1
5.8
7.8
19.7
130
196
mJ
mJ
µC
µC
A
ꢀ freewheeling diode for IGBT
Tj = 150 °C, 200 A, 400 V, 3000 A/µs
Tj = 25 °C, 200 A, 400 V, 3000 A/µs
Tj = 150 °C, 200 A, 400, 3000 A/µs
Tj = 25 °C, 200 A, 400 V, 3000 A/µs
Tj = 150 °C, 200 A, 400, 3000 A/µs
Footnotes
1) Nominal IGBT IF rating,
verified by design and characterization
A
Thermal Characteristics
Symbol Conditions
min.
typ.
max.
Unit
Tj
Tstg
Tsolder
Tsolder
-40
-40
175
175
250
320
°C
°C
°C
°C
10 min.
5 min.
Mechanical Characteristics
Symbol Conditions
Values
Unit
Raster
size
Area total
9 x 9
mm2
mm²
81
Anode
Metallization
Metallization
bondable (Al)
Cathode
Wire bond
Package
solderable (Ag/Ni)
Al, typ. diameter = 300 µm
150 mm wafer frame
Chips /
Package
179
pcs
SKCD
© by SEMIKRON
Rev. 0 – 12.06.2012
1