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SIHFL210T-E3 PDF预览

SIHFL210T-E3

更新时间: 2024-12-01 06:11:39
品牌 Logo 应用领域
威世 - VISHAY 晶体小信号场效应晶体管开关光电二极管局域网
页数 文件大小 规格书
8页 1392K
描述
Power MOSFET

SIHFL210T-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.65
其他特性:AVALANCHE RATED外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:200 V
最大漏极电流 (Abs) (ID):1.1 A最大漏极电流 (ID):0.96 A
最大漏源导通电阻:1.5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):3.1 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SIHFL210T-E3 数据手册

 浏览型号SIHFL210T-E3的Datasheet PDF文件第2页浏览型号SIHFL210T-E3的Datasheet PDF文件第3页浏览型号SIHFL210T-E3的Datasheet PDF文件第4页浏览型号SIHFL210T-E3的Datasheet PDF文件第5页浏览型号SIHFL210T-E3的Datasheet PDF文件第6页浏览型号SIHFL210T-E3的Datasheet PDF文件第7页 
IRFL9110, SiHFL9110  
Vishay Siliconix  
Power MOSFET  
FEATURES  
• Surface Mount  
PRODUCT SUMMARY  
VDS (V)  
- 100  
• Available in Tape and Reel  
• Dynamic dV/dt Rating  
• Repetitive Avalanche Rated  
• P-Channel  
Available  
RDS(on) (Ω)  
Qg (Max.) (nC)  
Qgs (nC)  
VGS = - 10 V  
1.2  
RoHS*  
COMPLIANT  
8.7  
2.2  
• Fast Switching  
• Ease of Paralleling  
• Lead (Pb)-free Available  
Qgd (nC)  
4.1  
Configuration  
Single  
DESCRIPTION  
S
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
G
The SOT-223 package is designed for surface-mount using  
vapor phase, infrared, or wave soldering techniques. Its  
unique package design allows for easy automatic  
pick-and-place as with other SOT or SOIC packages but has  
the added advantage of improved thermal performance due  
to an enlarged tab for heatsinking. Power dissipation of  
greater than 1.25 W is possible in a typical surface mount  
application.  
SOT-223  
D
P-Channel MOSFET  
ORDERING INFORMATION  
Package  
SOT-223  
SOT-223  
IRFL9110PbF  
SiHFL9110-E3  
IRFL9110  
IRFL9110TRPbFa  
SiHFL210T-E3a  
IRFL9110TRa  
SiHFL9110Ta  
Lead (Pb)-free  
SnPb  
SiHFL9110  
Note  
a. See device orientation.  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
- 100  
20  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
VGS  
T
C = 25 °C  
- 1.1  
Continuous Drain Current  
V
GS at - 10 V  
ID  
TC =100°C  
- 0.69  
- 8.8  
A
Pulsed Drain Currenta  
IDM  
Linear Derating Factor  
0.025  
0.017  
100  
W/°C  
Linear Derating Factor (PCB Mount)e  
Single Pulse Avalanche Energyb  
Avalanche Currenta  
EAS  
IAR  
mJ  
A
- 1.1  
Peak Diode Recovery dV/dtc  
EAR  
0.31  
mJ  
Maximum Power Dissipation  
Maximum Power Dissipation (PCB Mount)e  
Peak Diode Recovery dV/dtc  
TC = 25 °C  
3.1  
PD  
W
V/ns  
°C  
TA = 25 °C  
2.0  
dV/dt  
- 5.5  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
TJ, Tstg  
- 55 to + 150  
300d  
for 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = - 25 V, starting TJ = 25 °C, L = 7.7 mH, RG = 25 Ω, IAS = - 4.4 A (see fig. 12).  
c. ISD - 4.4 A, dI/dt - 75 A/µs, VDD VDS, TJ 150 °C.  
d. 1.6 mm from case.  
e. When mounted on 1" square PCB (FR-4 or G-10 material).  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91196  
S-81369-Rev. A, 07-Jul-08  
www.vishay.com  
1

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