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SIHFL214T-E3 PDF预览

SIHFL214T-E3

更新时间: 2024-12-01 06:11:39
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 878K
描述
Power MOSFET

SIHFL214T-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.08
其他特性:AVALANCHE RATED外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:250 V
最大漏极电流 (Abs) (ID):0.79 A最大漏极电流 (ID):0.79 A
最大漏源导通电阻:2 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):3.1 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SIHFL214T-E3 数据手册

 浏览型号SIHFL214T-E3的Datasheet PDF文件第2页浏览型号SIHFL214T-E3的Datasheet PDF文件第3页浏览型号SIHFL214T-E3的Datasheet PDF文件第4页浏览型号SIHFL214T-E3的Datasheet PDF文件第5页浏览型号SIHFL214T-E3的Datasheet PDF文件第6页浏览型号SIHFL214T-E3的Datasheet PDF文件第7页 
IRFL214, SiHFL214  
Vishay Siliconix  
Power MOSFET  
FEATURES  
• Surface Mount  
PRODUCT SUMMARY  
VDS (V)  
250  
Available  
• Available in Tape and Reel  
• Dynamic dV/dt Rating  
R
DS(on) (Ω)  
VGS = 10 V  
2.0  
RoHS*  
COMPLIANT  
Qg (Max.) (nC)  
8.2  
1.8  
• Repetitive Avalanche Rated  
• Fast Switching  
Q
Q
gs (nC)  
gd (nC)  
4.5  
• Ease of Paralleling  
Configuration  
Single  
• Simple Drive Requirements  
• Lead (Pb)-free Available  
D
DESCRIPTION  
SOT-223  
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
G
The SOT-223 package is designed for surface-mounting  
using vapor phase, infrared, or wave soldering techniques.  
Its unique package design allows for easy automatic  
pick-and-place as with other SOT or SOIC packages but has  
the added advantage of improved thermal performace due to  
an enlarged tab for heatsinking. Power dissipation of greater  
than 1.25 W is possible in a typical surface mount  
application.  
S
N-Channel MOSFET  
ORDERING INFORMATION  
Package  
SOT-223  
SOT-223  
IRFL214PbF  
SiHFL214-E3  
IRFL214  
IRFL214TRPbFa  
SiHFL214T-E3a  
IRFL214TRa  
SiHFL214Ta  
Lead (Pb)-free  
SnPb  
SiHFL214  
Note  
a. See device orientation.  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
250  
20  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
VGS  
TC = 25 °C  
TC =100°C  
0.79  
0.50  
6.3  
Continuous Drain Current  
VGS at 10 V  
ID  
A
Pulsed Drain Currenta  
IDM  
Linear Derating Factor  
0.025  
0.017  
50  
W/°C  
Linear Derating Factor (PCB Mount)e  
Single Pulse Avalanche Energyb  
Repetitive Avalanche Currenta  
Repetitive Avalanche Energya  
Maximum Power Dissipation  
Maximum Power Dissipation (PCB Mount)e  
EAS  
IAR  
mJ  
A
0.79  
0.31  
3.1  
EAR  
mJ  
T
C = 25 °C  
PD  
W
TA = 25 °C  
2.0  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91194  
S-81393-Rev. A, 07-Jul-08  
www.vishay.com  
1

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