IRFL9110, SiHFL9110
Vishay Siliconix
Power MOSFET
FEATURES
• Surface Mount
PRODUCT SUMMARY
VDS (V)
- 100
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• P-Channel
Available
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
VGS = - 10 V
1.2
RoHS*
COMPLIANT
8.7
2.2
• Fast Switching
• Ease of Paralleling
• Lead (Pb)-free Available
Qgd (nC)
4.1
Configuration
Single
DESCRIPTION
S
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
G
The SOT-223 package is designed for surface-mount using
vapor phase, infrared, or wave soldering techniques. Its
unique package design allows for easy automatic
pick-and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance due
to an enlarged tab for heatsinking. Power dissipation of
greater than 1.25 W is possible in a typical surface mount
application.
SOT-223
D
P-Channel MOSFET
ORDERING INFORMATION
Package
SOT-223
SOT-223
IRFL9110PbF
SiHFL9110-E3
IRFL9110
IRFL9110TRPbFa
SiHFL210T-E3a
IRFL9110TRa
SiHFL9110Ta
Lead (Pb)-free
SnPb
SiHFL9110
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
- 100
20
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
V
VGS
T
C = 25 °C
- 1.1
Continuous Drain Current
V
GS at - 10 V
ID
TC =100°C
- 0.69
- 8.8
A
Pulsed Drain Currenta
IDM
Linear Derating Factor
0.025
0.017
100
W/°C
Linear Derating Factor (PCB Mount)e
Single Pulse Avalanche Energyb
Avalanche Currenta
EAS
IAR
mJ
A
- 1.1
Peak Diode Recovery dV/dtc
EAR
0.31
mJ
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)e
Peak Diode Recovery dV/dtc
TC = 25 °C
3.1
PD
W
V/ns
°C
TA = 25 °C
2.0
dV/dt
- 5.5
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
TJ, Tstg
- 55 to + 150
300d
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 25 V, starting TJ = 25 °C, L = 7.7 mH, RG = 25 Ω, IAS = - 4.4 A (see fig. 12).
c. ISD ≤ - 4.4 A, dI/dt ≤ - 75 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91196
S-81369-Rev. A, 07-Jul-08
www.vishay.com
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