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SIHFP048RPBF

更新时间： 2024-10-16 13:13:31

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
9页	1579K
描述
Power Field-Effect Transistor,

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SIHFP048RPBF 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.63
Is Samacsys：	N	Base Number Matches：	1

SIHFP048RPBF 数据手册

IRFP048, SiHFP048

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

Available

• Isolated Central Mounting Hole

• 175 °C Operating Temperature

• Ease of Paralleling

R_DS(on)(Ω)

V_GS= 10 V

0.018

RoHS*

COMPLIANT

Q_g(Max.) (nC)

110

_gs(nC)

_gd(nC)

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

Configuration

Single

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

TO-247AC

The

TO-247AC

package

preferred

for

commercial-industrial applications where higher power

levels preclude the use of TO-220AB devices. The

TO-247AC is similar but superior to the earlier TO-218

package because its isolated mounting hole. It also provides

greater creepage distances between pins to meet the

requirements of most safety specifications.

N-Channel MOSFET

ORDERING INFORMATION

Package

TO-247AC

IRFP048PbF

SiHFP048-E3

IRFP048

Lead (Pb)-free

SnPb

SiHFP048

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

V_DS

V_GS

Gate-Source Voltage

Continuous Drain Current^e

_C= 25 °C

V_GSat 10 V

I_D

Continuous Drain Current

Pulsed Drain Current^a

T_C= 100 °C

290

I_DM

Linear Derating Factor

1.3

W/°C

Single Pulse Avalanche Energy^b

Maximum Power Dissipation

Peak Diode Recovery dV/dt^c

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^d

E_AS

P_D

200

_C= 25 °C

190

dV/dt

T_J, T_stg

4.5

V/ns

- 55 to + 175

300

°C

for 10 s

6-32 or M3 screw

lbf · in

N · m

Mounting Torque

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 25 V, starting T_J= 25 °C, L = 43 μH, R_g= 25 Ω, I_AS= 73 A (see fig. 12).

c. I_SD≤ 72 A, dI/dt ≤ 200 A/μs, V_DD≤ V_DS, T_J≤ 175 °C.

d. 1.6 mm from case.

e. Current limited by the package (die current = 73 A).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91198

S11-0447-Rev. B, 14-Mar-11

www.vishay.com

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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