Datasheet > SIHFP064-E3

SIHFP064-E3

更新时间： 2024-10-16 09:25:31

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威世 - VISHAY		/
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描述
Power MOSFET

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SIHFP064-E3 数据手册

IRFP064, SiHFP064

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

• Repetitive Avalanche Rated

• Ultra Low On- Resistance

Available

R_DS(on)(Ω)

V_GS= 10 V

0.009

RoHS*

COMPLIANT

Q_g(Max.) (nC)

190

• Very Low Thermal Resistance

• Isolated Central Mounting Hole

• 175 °C Operating Temperature

• Fast Switching

_gs(nC)

_gd(nC)

Configuration

Single

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

TO-247AC

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The

TO-247AC

package

preferred

for

commercial-industrial applications where higher power

levels preclude the use of TO-220AB devices. The

TO-247AC is similar but superior to the earlier TO-218

package because its isolated mounting hole. It also provides

greater creepage distances between pins to meet the

requirements of most safety specifications.

N-Channel MOSFET

ORDERING INFORMATION

Package

TO-247AC

IRFP064PbF

SiHFP064-E3

IRFP064

Lead (Pb)-free

SnPb

SiHFP064

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_C= 25 °C

_C= 100 °C

Continuous Drain Current^e

V_GSat 10 V

I_D

Pulsed Drain Current^a

I_DM

520

Linear Derating Factor

2.0

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

1000

E_AR

P_D

300

Maximum Power Dissipation

_C= 25 °C

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

4.5

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^d

- 55 to + 175

°C

for 10 s

6-32 or M3 screw

300

lbf · in

N · m

Mounting Torque

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 25 V, starting T_J= 25 °C, L = 69 μH, R_g= 25 Ω, I_AS= 130 A (see fig. 12).

c. I_SD≤ 130 A, dI/dt ≤ 300 A/μs, V_DD≤ V_DS, T_J≤ 175 °C.

d. 1.6 mm from case.

e. Current limited by the package (die current = 130 A).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91201

S11-0447-Rev. C, 14-Mar-11

www.vishay.com

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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