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SIHFL214TR-GE3 PDF预览

SIHFL214TR-GE3

更新时间: 2024-12-01 15:51:15
品牌 Logo 应用领域
威世 - VISHAY 局域网开关光电二极管晶体管
页数 文件大小 规格书
9页 926K
描述
TRANSISTOR 790 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-4, FET General Purpose Small Signal

SIHFL214TR-GE3 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.08
Is Samacsys:N其他特性:AVALANCHE RATED
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:250 V最大漏极电流 (Abs) (ID):0.79 A
最大漏极电流 (ID):0.79 A最大漏源导通电阻:2 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G4
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:4
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):3.1 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SIHFL214TR-GE3 数据手册

 浏览型号SIHFL214TR-GE3的Datasheet PDF文件第2页浏览型号SIHFL214TR-GE3的Datasheet PDF文件第3页浏览型号SIHFL214TR-GE3的Datasheet PDF文件第4页浏览型号SIHFL214TR-GE3的Datasheet PDF文件第5页浏览型号SIHFL214TR-GE3的Datasheet PDF文件第6页浏览型号SIHFL214TR-GE3的Datasheet PDF文件第7页 
IRFL214, SiHFL214  
Vishay Siliconix  
Power MOSFET  
FEATURES  
Halogen-free According to IEC 61249-2-21  
Definition  
• Surface Mount  
PRODUCT SUMMARY  
VDS (V)  
250  
R
DS(on) (Ω)  
VGS = 10 V  
2.0  
Qg (Max.) (nC)  
8.2  
1.8  
• Available in Tape and Reel  
• Dynamic dV/dt Rating  
• Repetitive Avalanche Rated  
• Fast Switching  
Q
Q
gs (nC)  
gd (nC)  
4.5  
Configuration  
Single  
• Ease of Paralleling  
• Simple Drive Requirements  
• Compliant to RoHS Directive 2002/95/EC  
D
SOT-223  
DESCRIPTION  
D
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
S
G
D
G
The SOT-223 package is designed for surface-mounting  
using vapor phase, infrared, or wave soldering techniques.  
Its unique package design allows for easy automatic  
pick-and-place as with other SOT or SOIC packages but  
has the added advantage of improved thermal performace  
due to an enlarged tab for heatsinking. Power dissipation of  
greater than 1.25 W is possible in a typical surface mount  
application.  
S
N-Channel MOSFET  
ORDERING INFORMATION  
Package  
SOT-223  
SOT-223  
SiHFL214TR-GE3a  
IRFL214TRPbFa  
SiHFL214T-E3a  
IRFL214TRa  
Lead (Pb)-free and Halogen-free  
SiHFL214-GE3  
IRFL214PbF  
SiHFL214-E3  
IRFL214  
Lead (Pb)-free  
SnPb  
SiHFL214  
SiHFL214Ta  
Note  
a. See device orientation.  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
250  
20  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
VGS  
T
C = 25 °C  
0.79  
0.50  
6.3  
Continuous Drain Current  
VGS at 10 V  
ID  
TC = 100 °C  
A
Pulsed Drain Currenta  
IDM  
Linear Derating Factor  
0.025  
0.017  
50  
W/°C  
Linear Derating Factor (PCB Mount)e  
Single Pulse Avalanche Energyb  
Repetitive Avalanche Currenta  
Repetitive Avalanche Energya  
Maximum Power Dissipation  
Maximum Power Dissipation (PCB Mount)e  
EAS  
IAR  
mJ  
A
0.79  
0.31  
3.1  
EAR  
mJ  
TC = 25 °C  
TA = 25 °C  
PD  
W
2.0  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91194  
S10-1257-Rev. C, 31-May-10  
www.vishay.com  
1

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