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SIHFL9014T PDF预览

SIHFL9014T

更新时间: 2024-12-01 06:11:39
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管开关脉冲光电二极管局域网
页数 文件大小 规格书
8页 1037K
描述
Power MOSFET

SIHFL9014T 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:SOT-223
包装说明:SMALL OUTLINE, R-PDSO-G4针数:4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.12Is Samacsys:N
其他特性:AVALANCHE RATED雪崩能效等级(Eas):140 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):1.8 A最大漏极电流 (ID):1.8 A
最大漏源导通电阻:0.5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G4JESD-609代码:e0
元件数量:1端子数量:4
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):240
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):3.1 W
最大脉冲漏极电流 (IDM):14 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SIHFL9014T 数据手册

 浏览型号SIHFL9014T的Datasheet PDF文件第2页浏览型号SIHFL9014T的Datasheet PDF文件第3页浏览型号SIHFL9014T的Datasheet PDF文件第4页浏览型号SIHFL9014T的Datasheet PDF文件第5页浏览型号SIHFL9014T的Datasheet PDF文件第6页浏览型号SIHFL9014T的Datasheet PDF文件第7页 
IRFL9014, SiHFL9014  
Vishay Siliconix  
Power MOSFET  
FEATURES  
• Surface Mount  
PRODUCT SUMMARY  
VDS (V)  
- 60  
Available  
• Available in Tape and Reel  
• Dynamic dV/dt Rating  
R
DS(on) (Ω)  
VGS = - 10 V  
0.50  
RoHS*  
Qg (Max.) (nC)  
12  
3.8  
5.1  
COMPLIANT  
• Repetitive Avalanche Rated  
• P-Channel  
Q
Q
gs (nC)  
gd (nC)  
Configuration  
Single  
• Fast Switching  
• Ease of Paralleling  
• Lead (Pb)-free Available  
S
DESCRIPTION  
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
SOT-223  
G
The SOT-223 package is designed for surface-mounting  
using vapor phase, infrared, or wave soldering techniques.  
Its unique package design allows for easy automatic  
pick-and-place as with other SOT or SOIC packages but has  
the added advantage of improved thermal performace due to  
an enlarged tab for heatsinking. Power dissipation of greater  
than 1.25 W is possible in a typical surface mount  
application.  
D
P-Channel MOSFET  
ORDERING INFORMATION  
Package  
SOT-223  
SOT-223  
IRFL9014PbF  
SiHFL9014-E3  
IRFL9014  
IRFL9014TRPbFa  
SiHFL9014T-E3a  
IRFL9014TRa  
SiHFL9014Ta  
Lead (Pb)-free  
SnPb  
SiHFL9014  
Note  
a. See device orientation.  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
- 60  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
VGS  
20  
TC = 25 °C  
TC =100°C  
- 1.8  
- 1.1  
- 14  
Continuous Drain Current  
VGS at - 10 V  
ID  
A
Pulsed Drain Currenta  
IDM  
Linear Derating Factor  
0.025  
0.017  
140  
W/°C  
Linear Derating Factor (PCB Mount)e  
Single Pulse Avalanche Energyb  
Repetitive Avalanche Currenta  
Repetitive Avalanche Energya  
EAS  
IAR  
mJ  
A
- 1.8  
0.31  
EAR  
mJ  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91195  
S-81412-Rev. A, 07-Jul-08  
www.vishay.com  
1

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