IRFL214, SiHFL214
Vishay Siliconix
Power MOSFET
FEATURES
• Surface Mount
PRODUCT SUMMARY
VDS (V)
250
Available
• Available in Tape and Reel
• Dynamic dV/dt Rating
R
DS(on) (Ω)
VGS = 10 V
2.0
RoHS*
COMPLIANT
Qg (Max.) (nC)
8.2
1.8
• Repetitive Avalanche Rated
• Fast Switching
Q
Q
gs (nC)
gd (nC)
4.5
• Ease of Paralleling
Configuration
Single
• Simple Drive Requirements
• Lead (Pb)-free Available
D
DESCRIPTION
SOT-223
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
G
The SOT-223 package is designed for surface-mounting
using vapor phase, infrared, or wave soldering techniques.
Its unique package design allows for easy automatic
pick-and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performace due to
an enlarged tab for heatsinking. Power dissipation of greater
than 1.25 W is possible in a typical surface mount
application.
S
N-Channel MOSFET
ORDERING INFORMATION
Package
SOT-223
SOT-223
IRFL214PbF
SiHFL214-E3
IRFL214
IRFL214TRPbFa
SiHFL214T-E3a
IRFL214TRa
SiHFL214Ta
Lead (Pb)-free
SnPb
SiHFL214
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
250
20
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
V
VGS
TC = 25 °C
TC =100°C
0.79
0.50
6.3
Continuous Drain Current
VGS at 10 V
ID
A
Pulsed Drain Currenta
IDM
Linear Derating Factor
0.025
0.017
50
W/°C
Linear Derating Factor (PCB Mount)e
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)e
EAS
IAR
mJ
A
0.79
0.31
3.1
EAR
mJ
T
C = 25 °C
PD
W
TA = 25 °C
2.0
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91194
S-81393-Rev. A, 07-Jul-08
www.vishay.com
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