Datasheet > SIHFL210-E3

SIHFL210-E3

更新时间： 2024-10-16 06:11:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	1069K
描述
Power MOSFET

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数据手册

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SIHFL210-E3 数据手册

IRFL210, SiHFL210

Vishay Siliconix

Power MOSFET

FEATURES

• Surface Mount

PRODUCT SUMMARY

V_DS(V)

200

Available

• Available in Tape and Reel

• Dynamic dV/dt Rating

_DS(on)(Ω)

V_GS= 10 V

1.5

RoHS*

Q_g(Max.) (nC)

8.2

1.8

COMPLIANT

• Repetitive Avalanche Rated

• Fast Switching

_gs(nC)

_gd(nC)

4.5

Configuration

Single

• Ease of Paralleling

• Simple Drive Requirements

• Lead (Pb)-free Available

SOT-223

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The SOT-223 package is designed for surface-mounting

using vapor phase, infrared, or wave soldering techniques.

Its unique package design allows for easy automatic

pick-and-place as with other SOT or SOIC packages but has

the added advantage of improved thermal performace due to

an enlarged tab for heatsinking. Power dissipation of greater

than 1.25 W is possible in a typical surface mount

application.

N-Channel MOSFET

ORDERING INFORMATION

Package

SOT-223

IRFL210PbF

SiHFL210-E3

IRFL210

IRFL210TRPbF^a

SiHFL210T-E3^a

IRFL210TR^a

SiHFL210T^a

Lead (Pb)-free

SnPb

SiHFL210

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

200

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_C= 25 °C

T_C=100°C

0.96

0.6

Continuous Drain Current

V_GSat 10 V

I_D

Pulsed Drain Current^a

I_DM

7.7

Linear Derating Factor

0.025

0.017

W/°C

Linear Derating Factor (PCB Mount)^e

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

0.96

0.31

E_AR

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91193

S-81377-Rev. A, 30-Jun-08

www.vishay.com

12 3 4 5 6 7 8

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